Inventor
DANIEL FEEZELL
Inventor
US
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10DInorganic electric semiconductor devices20%
B82YSpecific uses or applications of nanostructures17%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
B82BNanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units2%
G01QScanning-probe techniques or apparatus2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
12,255,265Devices comprising distributed bragg reflectors and methods of making the devices202512,078,654Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips202411,715,635Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching202311,652,188Method of fabricating broad-band lattice-matched omnidirectional distributed Bragg reflectors using random nanoporous structures202311,456,370Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal202211,374,106Method of making heteroepitaxial structures and device formed by the method202211,349,011Method of making heteroepitaxial structures and device formed by the method202211,342,441Method of forming a seed area and growing a heteroepitaxial layer on the seed area202211,342,442Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal202211,342,438Device with heteroepitaxial structure made using a growth mask202211,177,126Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021Patents assigned to STC UNM (1)· patent assignee history
2021–2025Based in US· patent location history
2022–2025Patents assigned to UNM RAINFOREST INNOVATIONS (10)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNM RAINFOREST INNOVATIONS | 10 | 2022–2025 |
| STC UNM | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 11 | 2021–2025 |