Inventor
Nadeemmullah A. Mahadik
Inventor
Springfield, VA, US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth27%
H01LSemiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H10DInorganic electric semiconductor devices20%
PatentTitleYear
10,937,649Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN202110,256,094Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process201910,256,090Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process20199,773,666'Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2021Patents assigned to EDDY JR CHARLES R (4)· patent assignee history
2017–2021Patents assigned to MAHADIK NADEEMMULLAH A (4)· patent assignee history
2017–2021Patents assigned to MEHL MICHAEL J (2)· patent assignee history
2017–2021Based in Springfield, VA, US· patent location history
2019Patents assigned to GASKILL DAVID KURT (2)· patent assignee history
2019Patents assigned to MYERS WARD RACHAEL L (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| EDDY JR CHARLES R | 4 | 2017–2021 |
| MAHADIK NADEEMMULLAH Aself | 4 | 2017–2021 |
| GASKILL DAVID KURT | 2 | 2019 |
| MEHL MICHAEL J | 2 | 2017–2021 |
| MYERS WARD RACHAEL L | 2 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Springfield, Virginia, US | 4 | 2017–2021 |