LexDanaLexDanabeta
Inventor

Wipul Pemsiri Jayasekara

Inventor
Los Gatos, CA, US

Overview

53→
Patents
2004–2015
Patent span
Physics
Primary field (CPC G)

Patents· 53 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer29%
B82YSpecific uses or applications of nanostructures21%
Y10TTechnical subjects covered by former us classification18%
G01RMeasuring electric variables12%
H10NElectric solid-state devices not otherwise provided for4%
H01FMagnets3%
H10BElectronic memory devices3%
B24BMachines, devices, or processes for grinding or polishing2%
C23FNon-mechanical removal of metallic material from surface1%
G11CStatic stores1%
PatentTitleYear
9,054,308'Plasma reduction method for modifying metal oxide stoichiometry in ReRAM'20158,835,892'Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same'20148,520,424'Composition of memory cell with resistance-switching layers'20138,421,050'Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same'20138,284,525'Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface'20128,266,785'Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability'20128,136,226'Read sensors and methods of making same with back-edge milling and refilling'20128,098,463'Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface'20128,037,593'Method for manufacturing an ultra narrow gap magnetoresistive sensor'20117,974,047'Current perpendicular to plane differential magnetoresistance read head design using a current confinement structure proximal to an air bearing surface'20117,961,440'Current perpendicular to plane magnetoresistive sensor with reduced read gap'20117,881,018'Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise'20117,881,011'Perpendicular pole structure and method of fabricating the same'20117,863,911'Test device and method for measurement of tunneling magnetoresistance properties of a manufacturable wafer by the current-in-plane-tunneling technique'20117,848,061'Current perpendicular to plane (CPP) magnetoresistive sensor with back flux guide'20107,848,065'Magnetoresistive sensor having an anisotropic hard bias with high coercivity'20107,839,606'Magnetic head having oxidized read sensor edges to reduce sensor current shunting'20107,839,607'Method to reduce corner shunting during fabrication of CPP read heads'20107,820,455'Method for manufacturing a tunnel junction magnetoresistive sensor with improved performance and having a CoFeB free layer'20107,773,349'Tunnel MR head with long stripe height sensor stabilized through the shield'20107,765,676'Method for patterning a magnetoresistive sensor'20107,652,855'Magnetic sensor with extended free layer and overlaid leads'20107,640,650'Method of making a magnetoresistive reader structure'20107,639,456'Double mill process for patterning current perpendicular to plane (CPP) magnetoresistive devices to minimize barrier shorting and barrier damage'20097,627,942'Method for using CVD process to encapsulate coil in a magnetic write head'20097,623,325'Method for providing an endpoint layer for ion milling of top of read sensor having top lead connection and sensor formed thereby'20097,574,791'Method to fabricate side shields for a magnetic sensor'20097,565,733'Process for the fabrication of multilayer thin film magnetoresistive sensors'20097,562,436'Deposition defined trackwidth for very narrow trackwidth CPP device'20097,497,008'Method of fabricating a thin film magnetic sensor on a wafer'20097,444,739'Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process'20087,446,979'Laminated draped shield for CPP read sensors'20087,419,610'Method of partial depth material removal for fabrication of CPP read sensor'20087,375,931'Magnetic recording head with ESD shunt trace'20087,367,110'Method of fabricating a read head having shaped read sensor-biasing layer junctions using partial milling'20087,333,300'Magnetoresistive device with lapping guide treated to eliminate magnetoresistive effect thereof'20087,332,099'Ion bombardment of electrical lapping guides to decrease noise during lapping process'20087,329,362'Dual angle milling for current perpendicular to plane (CPP) magnetoresistive sensor definition'20087,295,401'Laminated side shield for perpendicular write head for improved performance'20077,281,316'Perpendicular pole structure and method of fabricating the same'20077,270,758'Method to improve ability to perform CMP-assisted liftoff for trackwidth definition'20077,251,103'Perpendicular pole having and adjacent non-magnetic CMP resistant structure'20077,123,455'Magnetic tunnel junction sensor with insulating antiferromagnetic material extending from free layer extensions to electrically conductive lead'20067,103,963'Method for manufacturing a tunnel junction sensor with non-shunting stabilization'20067,075,094'System, method, and apparatus for ion beam etching process stability using a reference for time scaling subsequent steps'20067,035,063'Magnetic tunnel junction sensor with nickel-oxide longitudinal bias layer abutting opposite sides of active region'20067,005,242'Magnetic head and method of making the same using an etch-stop layer for removing portions of the capping layer'20066,996,894'Methods of making magnetic heads with improved contiguous junctions'20066,995,957'Magnetoresistive sensor having a high resistance soft magnetic layer between sensor stack and shield'20066,982,042'Ion bombardment of electrical lapping guides to decrease noise during lapping process'20066,930,866'Magnetic tunnel junction sensor having a longitudinal bias layer in contact with a free layer'20056,919,280'Method of removing magnetoresistive sensor cap by reactive ion etching'20056,833,982'Magnetic tunnel junction sensor with a free layer biased by longitudinal layers interfacing top surfaces of free layer extensions which extend beyond an active region of the sensor'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2010Patents assigned to HITACHI GLOBAL STORAGE TECH (36)· patent assignee history
2004–2010Based in San Jose, CA, US· patent location history
2005–2015Based in Los Gatos, CA, US· patent location history
2010–2012Patents assigned to HITACHI GLOBAL STORAGE TECH NL (11)· patent assignee history
2012–2014Patents assigned to JAYASEKARA WIPUL PEMSIRI (4)· patent assignee history
2012Patents assigned to GILL HARDAYAL S (3)· patent assignee history
2013–2015Patents assigned to SANDISK 3D LLC (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI GLOBAL STORAGE TECH362004–2010
HITACHI GLOBAL STORAGE TECH NL112010–2012
JAYASEKARA WIPUL PEMSIRIself42012–2014
SANDISK 3D LLC42013–2015
GILL HARDAYAL S32012
Locations
LocationPatentsSpan
Los Gatos, California, US422005–2015
San Jose, California, US112004–2010