Inventor
Yoshio Kawashima
Inventor
Osaka, JP
Overview
Patents· 51 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for27%
H10BElectronic memory devices26%
H01LSemiconductor devices10%
H10DInorganic electric semiconductor devices6%
G11CStatic stores5%
B82YSpecific uses or applications of nanostructures4%
Y10TTechnical subjects covered by former us classification4%
H01FMagnets4%
G01RMeasuring electric variables3%
G11BInformation storage based on relative movement between record carrier and transducer3%
PatentTitleYear
9,478,584'Nonvolatile memory device and method for manufacturing the same'20169,444,044'Resistive nonvolatile storage device, manufacturing method for same, and resistive nonvolatile storage apparatus'20169,184,381'Nonvolatile storage element and method for manufacturing same'20159,142,775'Method of manufacturing semiconductor memory device'20159,142,773'Variable resistance nonvolatile memory element and method of manufacturing the same'20159,130,167'Method of manufacturing a nonvolatile memory device having a variable resistance element whose resistance value changes reversibly upon application of an electric pulse'20159,082,967'Non-volatile memory device and manufacturing method thereof'20159,076,959'Manufacturing method of nonvolatile memory device and nonvolatile memory device'20159,064,570'Non-volatile memory device and method for manufacturing the same'20159,054,305'Nonvolatile memory device and method of manufacturing the same'20159,006,698'Variable resistance element and method of manufacturing the same'20158,995,170'Non-volatile memory device'20158,952,350'Non-volatile memory device and manufacturing method thereof'20158,921,200'Nonvolatile storage element and method of manufacturing thereof'20148,889,478'Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element'20148,785,238'Nonvolatile memory element and method for manufacturing same'20148,610,102'Nonvolatile memory device and manufacturing method thereof'20138,574,957'Method for manufacturing nonvolatile semiconductor memory element'20138,537,605'Nonvolatile semiconductor memory device having coplanar surfaces at resistance variable layer and wiring layer and manufacturing method thereof'20138,530,321'Variable resistance element and manufacturing method thereof'20138,492,743'Nonvolatile memory device and method of manufacturing the same'20138,481,990'Nonvolatile memory element'20138,471,235'Nonvolatile memory element having a resistance variable layer and manufacturing method thereof'20138,445,883'Nonvolatile semiconductor memory device and manufacturing method thereof'20138,437,173'Nonvolatile memory element, manufacturing method thereof, design support method therefor, and nonvolatile memory device'20138,426,836'Nonvolatile memory device and manufacturing method thereof'20138,394,669'Resistance variable element and resistance variable memory device'20138,389,972'Nonvolatile memory device and method of manufacturing the same'20138,389,990'Nonvolatile semiconductor memory device and manufacturing method thereof'20138,344,345'Nonvolatile semiconductor memory device having a resistance variable layer and manufacturing method thereof'20138,253,136'Nonvolatile semiconductor memory device and manufacturing method thereof'20128,242,479'Nonvolatile memory apparatus and manufacturing method thereof'20128,013,711'Variable resistance element, semiconductor device, and method for manufacturing variable resistance element'20117,981,760'Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device'20117,960,770'Nonvolatile memory element array with storing layer formed by resistance variable layers'20117,919,774'Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof'20117,692,178'Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof'20107,564,073'CMOS and HCMOS semiconductor integrated circuit'20097,554,139'Semiconductor manufacturing method and semiconductor device'20097,119,417'Semiconductor device and fabrication method thereof'20067,087,473'Method of forming conventional complementary MOS transistors and complementary heterojunction MOS transistors on common substrate'20067,079,361'Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same'20066,950,333'Magnetic memory and method for driving the same, and magnetic memory device using the same'20056,943,041'Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same'20056,917,492'Magnetoresistive element and method for manufacturing the same and nonvolatile memory including the same'20056,861,940'Magnetoresistive element'20056,708,390'Method for manufacturing magnetoresistive element'20044,881,987'Process for direct softening heat treatment of rolled wire rods'19894,834,345'Process and apparatus for direct softening heat treatment of rolled wire rods'19894,823,577'Method of feeding material to hot forging machine'19894,761,980'Method of feeding material to hot forging machine'1988Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1988–1989Based in Kitakyushu, JP· patent location history
1989Based in Kitakyusyu, JP· patent location history
2004–2006Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (8)· patent assignee history
2004–2006Based in Neyagawa, JP· patent location history
2006–2016Based in Osaka, JP· patent location history
2009–2015Patents assigned to PANASONIC CORP (33)· patent assignee history
2012–2015Patents assigned to KAWASHIMA YOSHIO (20)· patent assignee history
2012–2015Patents assigned to MIKAWA TAKUMI (19)· patent assignee history
2014Based in Okaka, JP· patent location history
2015–2016Patents assigned to PANASONIC IP MAN CO LTD (13)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PANASONIC CORP | 33 | 2009–2015 |
| KAWASHIMA YOSHIOself | 20 | 2012–2015 |
| MIKAWA TAKUMI | 19 | 2012–2015 |
| PANASONIC IP MAN CO LTD | 13 | 2015–2016 |
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 8 | 2004–2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Osaka, JP | 40 | 2006–2016 |
| Neyagawa, JP | 6 | 2004–2006 |
| Kitakyusyu, JP | 2 | 1989 |
| Kitakyushu, JP | 2 | 1988–1989 |
| Okaka, JP | 1 | 2014 |