Inventor

Shinichi Ikenaga

Inventor
Koganei, JP

Overview

21→
Patents
1987–2009
Patent span
Electricity
Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores36%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
H10BElectronic memory devices19%
H10DInorganic electric semiconductor devices15%
G06FElectric digital data processing3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
7,499,340'Semiconductor memory device and defect remedying method thereof'20097,345,929'Semiconductor memory device and defect remedying method thereof'20087,203,101'Semiconductor memory device and defect remedying method thereof'20077,016,236'Semiconductor memory device and defect remedying method thereof'20066,898,130'Semiconductor memory device and defect remedying method thereof'20056,657,901'Semiconductor device formed in a rectangle region on a semiconductor substrate including a voltage generating circuit'20036,515,913'Semiconductor memory device and defect remedying method thereof'20036,335,884'Semiconductor memory device and defect remedying method thereof'20026,212,089'Semiconductor memory device and defect remedying method thereof'20016,160,744'Semiconductor memory device and defect remedying method thereof'20006,049,500'Semiconductor memory device and defect remedying method thereof'20005,854,508'Semiconductor memory device having zigzag bonding pad arrangement'19985,602,771'Semiconductor memory device and defect remedying method thereof'19975,579,256'Semiconductor memory device and defect remedying method thereof'19964,949,306'Sense circuit and semiconductor memory having a current-voltage converter circuit'19904,942,556'Semiconductor memory device'19904,726,021'Semiconductor memory having error correcting means'19884,709,350'Semiconductor memory using multiple level storage structure'19874,701,884'Semiconductor memory for serial data access'19874,661,929'Semiconductor memory having multiple level storage structure'19874,636,985'Semiconductor memory having charge transfer device voltage amplifier'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–2009Patents assigned to HITACHI LTD (18)· patent assignee history
1987–1990Based in Kokubunji, JP· patent location history
1990–2009Based in Koganei, JP· patent location history
1997–2009Patents assigned to HITACHI VLSI ENG (5)· patent assignee history
2000Patents assigned to HITACHI VSLI ENGINEERING CORP (1)· patent assignee history
2006–2008Patents assigned to HITACHI ULSI SYS CO LTD (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD181987–2009
HITACHI VLSI ENG51997–2009
HITACHI ULSI SYS CO LTD32006–2008
HITACHI VSLI ENGINEERING CORP12000
Locations
LocationPatentsSpan
Koganei, JP151990–2009
Kokubunji, JP61987–1990