Inventor

Kosuke Yanagidaira

Inventor
Fujisawa, JP

Overview

39→
Patents
2009–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 39 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores29%
H10BElectronic memory devices13%
H01LSemiconductor devices12%
H10DInorganic electric semiconductor devices10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H03KPulse technique5%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use4%
G06FElectric digital data processing3%
H04LTransmission of digital information, e.g. telegraphic communication2%
PatentTitleYear
11,081,188Semiconductor memory device202111,049,571Semiconductor memory device for executing a read operation at high speed202110,916,276Nonvolatile memory and memory system202110,878,921Semiconductor memory202010,873,483Semiconductor device and memory system202010,854,546Manufacturing method of a semiconductor device and method for creating a layout thereof202010,725,909Memory device controlling including reading from a first memory and writing to a second memory based on timing and control signals202010,720,220Sense amplifier having a sense transistor to which different voltages are applied during sensing and after sensing to correct a variation of the threshold voltage of the sense transistor202010,643,715Semiconductor memory device and memory system configured to perform tracking read on first memory cells followed by shift read on second memory cells using read voltage correction value determined during the tracking read202010,553,283Semiconductor storage device202010,515,703Semiconductor memory device sense amplifier conductor layout and semiconductor memory device using a second read voltage during a read operation201910,490,499Manufacturing method of a semiconductor device and method for creating a layout thereof201910,454,721Semiconductor device and memory system201910,418,112Semiconductor memory device201910,297,326Sense amplifier and latch circuit for a semiconductor memory device and method of operation thereof201910,163,517Semiconductor memory device and memory system configured to perform tracking read on first memory cells followed by shift read on second memory cells using read voltage correction value determined during the tracking read201810,163,790Manufacturing method of a semiconductor device and method for creating a layout thereof201810,121,549Semiconductor memory device201810,043,905Semiconductor device20189,953,714Semiconductor device20189,859,011'Semiconductor memory device and memory system'20189,806,021'Manufacturing method of a semiconductor device and method for creating a layout thereof'20179,653,125'Storage device, memory device and semiconductor device for improving data transfer speeds'20179,583,437'Manufacturing method of a semiconductor device and method for creating a layout thereof'20179,570,182'Semiconductor memory device and memory system'20179,564,185'Semiconductor memory device'20179,520,164'ZQ calibration circuit and semiconductor device including the same'20169,209,070'Manufacturing method of a semiconductor device and method for creating a layout thereof'20158,865,583'Manufacturing method of a semiconductor device and method for creating a layout thereof'20148,816,723'Buffer circuit'20148,742,822'Level shift circuit'20148,298,928'Manufacturing method of a semiconductor device and method for creating a layout thereof'20127,952,958'Non-volatile semiconductor storage system'20117,948,796'Nonvolatile semiconductor memory device and method for controlling the same'20117,889,565'Nonvolatile semiconductor memory device and control method'20117,851,914'Semiconductor integrated circuit device'20107,738,276'Semiconductor device and method for manufacturing'20107,652,928'Semiconductor memory device and control method of the same'20107,532,520'Semiconductor memory device and control method of the same'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2017Patents assigned to TOSHIBA KK (17)· patent assignee history
2009–2010Based in Kawasaki, JP· patent location history
2010–2021Based in Fujisawa, JP· patent location history
2012–2014Patents assigned to KODAMA CHIKAAKI (2)· patent assignee history
2012–2014Patents assigned to YANAGIDAIRA KOSUKE (2)· patent assignee history
2014–2021Based in Kanagawa, JP· patent location history
2017–2021Patents assigned to TOSHIBA MEMORY CORP (21)· patent assignee history
2021Patents assigned to KIOXIA CORP (1)· patent assignee history
2021Based in Yokohama-shi, Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA MEMORY CORP212017–2021
TOSHIBA KK172009–2017
KODAMA CHIKAAKI22012–2014
YANAGIDAIRA KOSUKEself22012–2014
KIOXIA CORP12021
Locations
LocationPatentsSpan
Fujisawa, JP292010–2021
Kanagawa, JP72014–2021
Kawasaki, JP22009–2010
Yokohama-shi, Kanagawa, JP12021