Inventor
Naruhiro Hoshino
Inventor
Niigata, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C01Bprimary
C01BNon-metallic elements32%
C23CCoating metallic material26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry11%
H01LSemiconductor devices11%
C30BSingle-crystal growth5%
PatentTitleYear
10,870,581Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and polycrystalline silicon rod or polycrystalline silicon ingot202010,858,259Reactor for polycrystalline silicon production and method for producing polycrystalline silicon202010,858,258Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and polycrystalline silicon rod or polycrystalline silicon ingot202010,760,180Polycrystalline silicon ingot, polycrystalline silicon bar, and method for producing single crystal silicon20209,437,429'Polycrystalline silicon manufacturing apparatus and polycrystalline silicon manufacturing method'20169,394,606'Production method for polycrystalline silicon, and reactor for polycrystalline silicon production'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2020Patents assigned to SHINETSU CHEMICAL CO (6)· patent assignee history
2016–2020Based in Niigata, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHINETSU CHEMICAL CO | 6 | 2016–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Niigata, JP | 6 | 2016–2020 |