Inventor

Kuo-Chiang Ting

Inventor

Hsinchu, TW

Overview

25→

Patents

2004–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 25 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices27%

H10DInorganic electric semiconductor devices23%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

G11CStatic stores4%

H03KPulse technique4%

H10BElectronic memory devices4%

G02BOptical elements, systems or apparatus3%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%

H04BTransmission1%

PatentTitleYear

10,978,352FinFET device2021 10,867,954Interconnect chips2020 10,866,373Optical transceiver and manufacturing method thereof2020 10,746,923Photonic semiconductor device and method2020 10,720,436SRAM cell and logic cell design2020 10,720,401Interconnect chips2020 10,546,786Method of fabricating a FinFET device2020 10,515,888Semiconductor device and method for manufacturing the same2019 10,515,869Semiconductor package structure having a multi-thermal interface material structure2019 10,510,722Semiconductor device and method for manufacturing the same2019 10,468,418SRAM cell and logic cell design2019 10,304,800Packaging with substrates connected by conductive bumps2019 10,170,457COWOS structures and method of forming the same2019 10,062,614FinFET device2018 10,050,042SRAM cell and logic cell design2018 9,997,629FinFET with high mobility and strain channel2018 9,805,984'FinFET device'2017 9,659,810'Method of making a FinFET device'2017 9,449,971'Methods of forming FinFETs'2016 9,368,628'FinFET with high mobility and strain channel'2016 8,912,610'Structure and method for MOSFETS with high-K and metal gate structure'2014 8,729,634'FinFET with high mobility and strain channel'2014 8,697,515'Method of making a FinFET device'2014 6,995,062'Method to improve flash forward tunneling voltage (FTV) performance'2006 6,825,085'Method to improve flash forward tunneling voltage (FTV) performance'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history

2004–2006Based in Yunlin County, TW· patent location history

2014–2016Patents assigned to TING KUO-CHIANG (4)· patent assignee history

2014–2016Patents assigned to WU CHI-HSI (3)· patent assignee history

2014–2016Patents assigned to LAI KAO-TING (2)· patent assignee history

2014–2021Based in Hsinchu, TW· patent location history

2016–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (19)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	19	2016–2021
TAIWAN SEMICONDUCTOR MFG	6	2004–2016
TING KUO-CHIANGself	4	2014–2016
WU CHI-HSI	3	2014–2016
LAI KAO-TING	2	2014–2016

Locations

Location	Patents	Span
Hsinchu, TW	23	2014–2021
Yunlin County, TW	2	2004–2006