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Inventor

Robert L. Thornton

Inventor
East Palo Alto, CA, US

Overview

65→
Patents
1982–2009
Patent span
Electricity
Primary field (CPC H)

Patents· 65 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light36%
B82YSpecific uses or applications of nanostructures14%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
B41JTypewriters4%
G11BInformation storage based on relative movement between record carrier and transducer4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G06KGraphical data reading3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
G02BOptical elements, systems or apparatus2%
H04NPictorial communication, e.g. television2%
PatentTitleYear
7,633,621'Method for measurement of analyte concentrations and semiconductor laser-pumped, small-cavity fiber lasers for such measurements and other applications'20097,596,161'Laterally oxidized vertical cavity surface emitting lasers'20097,483,465'Near field optical apparatus'20097,327,667'Semiconductor laser and associated drive circuit substrate'20087,283,242'Optical spectroscopy apparatus and method for measurement of analyte concentrations or other such species in a specimen employing a semiconductor laser-pumped, small-cavity fiber laser'20077,187,704'Feedback enhanced laser'20077,160,749'Method and structure for eliminating polarization instability in laterally—oxidized VCSELs'20077,158,470'Near-field optical head system with integrated slider and laser'20077,095,767'Near field optical apparatus'20067,069,569'Near-field optical head system with integrated slider and laser'20067,039,075'Fiber extended, semiconductor laser'20066,963,530'Near-field optical head system with integrated slider and laser'20056,937,637'Semiconductor laser and associated drive circuit substrate'20056,922,423'Control system for a semiconductor laser'20056,807,131'Near-field hybrid magnetic-optical head system'20046,628,696'Multi-channel DWDM transmitter based on a vertical cavity surface emitting laser'20036,603,781'Multi-wavelength transmitter'20036,372,356'Compliant substrates for growing lattice mismatched films'20026,304,588'Method and structure for eliminating polarization instability in laterally-oxidized VCSELs'20016,297,068'Method for highly compact vertical cavity surface emitting lasers'20016,246,708'Semiconductor laser with associated electronic components integrally formed therewith'20016,208,681'Highly compact vertical cavity surface emitting lasers'20016,201,633'Micro-electromechanical based bistable color display sheets'20016,121,983'Method and apparatus for a solid state laser scanning architecture'20006,002,705'Wavelength and polarization multiplexed vertical cavity surface emitting lasers'19995,978,408'Highly compact vertical cavity surface emitting lasers'19995,944,537'Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices'19995,843,802'Semiconductor laser formed by layer intermixing'19985,832,019'Index guided semiconductor laser biode with shallow selective IILD'19985,766,981'Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD'19985,745,517'Alternative doping for AlGaInP laser diodes fabricated by impurity-induced layer disordering (IILD)'19985,708,674'Semiconductor laser or array formed by layer intermixing'19985,509,024'Diode laser with tunnel barrier layer'19965,436,193'Method of fabricating a stacked active region laser array'19955,386,428'Stacked active region laser array for multicolor emissions'19955,384,797'Monolithic multi-wavelength laser diode array'19955,337,074'Opto-electronic line printer having a high density, independently addressable, surface emitting semiconductor laser/light emitting diode array'19945,319,655'Multiwavelength laterally-injecting-type lasers'19945,317,586'Buried layer III-V semiconductor devices with impurity induced layer disordering'19945,252,513'Method for forming a laser and light detector on a semiconductor substrate'19935,216,443'Programmable intensity smart laser system capable of being fabricated on a semiconductive substrate'19935,210,766'Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors'19935,164,797'Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser'19925,162,239'Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors'19925,138,340'Temperature controlled light source for interlaced printer'19925,136,604'Apparatus and method for detecting the power level in single and multi-stripe integrated lasers'19925,062,115'High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays'19915,038,185'Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors'19914,987,468'Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser'19914,980,893'Monolithic high density arrays of independently addressable offset semiconductor laser sources'19904,875,216'Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications'19894,870,652'Monolithic high density arrays of independently addressable semiconductor laser sources'19894,830,983'Method of enhanced introduction of impurity species into a semiconductor structure from a deposited source and application thereof'19894,831,629'Incoherent, optically coupled laser arrays with increased spectral width'19894,824,798'Method of introducing impurity species into a semiconductor structure from a deposited source'19894,802,182'Monolithic two dimensional waveguide coupled cavity laser/modulator'19894,786,918'Incoherent, optically uncoupled laser arrays for electro-optic line modulators and line printers'19884,731,789'Clad superlattice semiconductor laser'19884,730,331'Superluminescent LED source'19884,727,556'Semiconductor lasers fabricated from impurity induced disordering'19884,727,557'Phased array semiconductor lasers fabricated from impurity induced disordering'19884,706,255'Phased array semiconductor laser with preferred emission in the fundamental supermode'19874,638,334'Electro-optic line printer with super luminescent LED source'19874,397,228'Self-adjusting apparatus for slitting peanuts'19834,317,411'Rotary peanut and blanching apparatus'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–1983Based in Moultrie, GA, US· patent location history
1987–2009Patents assigned to XEROX CORP (48)· patent assignee history
1987–1998Based in East Palo Alto, CA, US· patent location history
1992Based in Palo Alto, CA, US· patent location history
1995Patents assigned to SDL INC (1)· patent assignee history
1998–2009Based in Los Altos, CA, US· patent location history
2000–2001Based in Lake Oswego, OR, US· patent location history
2003Patents assigned to SIROS TECHNOLOGIES INC (2)· patent assignee history
2004–2009Patents assigned to RES INVESTMENT NETWORK INC (8)· patent assignee history
2006–2009Patents assigned to THORNTON ROBERT L (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
XEROX CORP481987–2009
RES INVESTMENT NETWORK INC82004–2009
THORNTON ROBERT Lself42006–2009
SIROS TECHNOLOGIES INC22003
SDL INC11995
Locations
LocationPatentsSpan
East Palo Alto, California, US341987–1998
Los Altos, California, US261998–2009
Lake Oswego, OR, US22000–2001
Moultrie, Georgia, US21982–1983
Palo Alto, California, US11992