Inventor

Tsuguo Inata

Inventor

Isehara, JP

Overview

5→

Patents

1986–1993

Patent span

Performing operations

Primary field (CPC B)

Patents· 5 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary

B82YSpecific uses or applications of nanostructures44%

H10DInorganic electric semiconductor devices33%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein11%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation11%

PatentTitleYear

5,266,814'Optically activated resonant-tunneling transistor'1993 5,216,261'Non-linear optical device having an improved rate for recovery'1993 4,929,984'Resonant tunnelling barrier structure device'1990 4,825,264'Resonant tunneling semiconductor device'1989 4,593,301'High electron mobility semiconductor device employing selectively doped heterojunction and dual, undoped spacer layers'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–1993Patents assigned to FUJITSU LTD (5)· patent assignee history

1986–1990Based in Isehara, JP· patent location history

1993Based in Kawasaki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FUJITSU LTD	5	1986–1993

Locations

Location	Patents	Span
Isehara, JP	3	1986–1990
Kawasaki, JP	2	1993