Inventor
JUN SUNG KANG
Inventor
US
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
B82YSpecific uses or applications of nanostructures27%
H01LSemiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
PatentTitleYear
12,453,115Nanowire transistor structure and method of shaping202512,349,394Dielectric isolation layer between a nanowire transistor and a substrate202512,328,905Cavity spacer for nanowire transistors202512,302,632Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process202511,929,396Cavity spacer for nanowire transistors202411,901,458Dielectric isolation layer between a nanowire transistor and a substrate202411,869,891Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process202411,869,973Nanowire transistor structure and method of shaping202411,715,787Self-aligned nanowire202311,404,578Dielectric isolation layer between a nanowire transistor and a substrate202211,342,411Cavity spacer for nanowire transistors202211,276,691Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widths202211,205,715Self-aligned nanowire2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to INTEL CORP (13)· patent assignee history
2021–2025Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 13 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 13 | 2021–2025 |