Inventor
Takuya Otabe
Inventor
Fukuyama, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices25%
H10DInorganic electric semiconductor devices25%
H10NElectric solid-state devices not otherwise provided for25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10TTechnical subjects covered by former us classification13%
PatentTitleYear
7,851,853'Semiconductor device comprising high-withstand voltage MOSFET and its manufacturing method'20107,743,488'Manufacturing method for variable resistive element'20107,276,175'Semiconductor device fabrication method'20076,855,973'Semiconductor memory device including a capacitor an upper electrode of which being resistant of exfoliation'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2010Patents assigned to SHARP KK (4)· patent assignee history
2005–2010Based in Fukuyama, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHARP KK | 4 | 2005–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fukuyama, JP | 4 | 2005–2010 |