Inventor
Koichi Goshonoo
Inventor
Aichi, JP
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers50%
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
C30BSingle-crystal growth3%
PatentTitleYear
9,899,572'Semiconductor light-emitting device'20189,444,009'Group-III nitride compound semiconductor light emitting element, manufacturing method therefor and semiconductor light emitting device'20169,299,902'Light emitting device'20169,263,258'Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device'20168,937,318'Light-emitting device having tapered portions of different lengths'20158,889,449'Group III nitride semiconductor light-emitting element and method for producing the same'20148,716,047'Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layer'20148,653,502'Group III nitride semiconductor light-emitting device'20148,609,444'Manufacturing method of mounting part of semiconductor light emitting element, manufacturing method of light emitting device, and semiconductor light emitting element'20138,610,167'Group III nitride compound semiconductor light-emitting device and method for producing the same'20138,350,284'Light emitting element and light emitting device'20138,309,381'Group III nitride semiconductor light-emitting device and production method therefor'20128,003,418'Method for producing group III nitride-based compound semiconductor device'20117,947,521'Method for forming electrode for group-III nitride compound semiconductor light-emitting devices'20117,723,743'Semiconductor light emitting element'20107,253,450'Light-emitting device'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2018Patents assigned to TOYODA GOSEI KK (15)· patent assignee history
2007–2016Based in Aichi, JP· patent location history
2012–2016Patents assigned to GOSHONOO KOICHI (7)· patent assignee history
2012–2014Patents assigned to MORIYAMA MIKI (5)· patent assignee history
2014Patents assigned to HASEGAWA TETSUYA (1)· patent assignee history
2014Patents assigned to HITOSUGI TARO (1)· patent assignee history
2014–2018Based in Kiyosu, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOYODA GOSEI KK | 15 | 2007–2018 |
| GOSHONOO KOICHIself | 7 | 2012–2016 |
| MORIYAMA MIKI | 5 | 2012–2014 |
| HASEGAWA TETSUYA | 1 | 2014 |
| HITOSUGI TARO | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Aichi, JP | 10 | 2007–2016 |
| Kiyosu, JP | 6 | 2014–2018 |