Inventor

Marko Tuominen

Inventor

Helsinki, FI

Overview

52→

Patents

1999–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 52 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%

C23CCoating metallic material20%

H01LSemiconductor devices15%

H10DInorganic electric semiconductor devices11%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

C30BSingle-crystal growth4%

C23FNon-mechanical removal of metallic material from surface3%

H01JElectric discharge tubes or discharge lamps3%

B05DProcesses for applying fluent materials to surfaces, in general3%

C09KMaterials for miscellaneous applications, not provided for elsewhere2%

PatentTitleYear

11,094,535Selective passivation and selective deposition2021 11,056,385Selective formation of metallic films on metallic surfaces2021 11,047,040Dual selective deposition2021 10,814,349Vapor phase deposition of organic films2020 10,695,794Vapor phase deposition of organic films2020 10,662,533Thermal atomic layer etching processes2020 10,665,425Atomic layer etching processes2020 10,662,534Thermal atomic layer etching processes2020 10,456,808Selective deposition of metals, metal oxides, and dielectrics2019 10,443,123Dual selective deposition2019 10,343,186Vapor phase deposition of organic films2019 10,283,319Atomic layer etching processes2019 10,280,519Thermal atomic layer etching processes2019 10,273,584Thermal atomic layer etching processes2019 10,157,786Selective formation of metallic films on metallic surfaces2018 10,049,924Selective formation of metallic films on metallic surfaces2018 10,047,435Dual selective deposition2018 9,895,715'Selective deposition of metals, metal oxides, and dielectrics'2018 9,679,808'Selective formation of metallic films on metallic surfaces'2017 9,587,307'Enhanced deposition of noble metals'2017 9,520,562'Method of making a resistive random access memory'2016 9,514,956'Method of growing oxide thin films'2016 9,502,289'Selective formation of metallic films on metallic surfaces'2016 9,472,757'Method of making a resistive random access memory device'2016 9,469,899'Selective deposition of noble metal thin films'2016 9,257,303'Selective formation of metallic films on metallic surfaces'2016 9,112,003'Selective formation of metallic films on metallic surfaces'2015 8,956,971'Selective formation of metallic films on metallic surfaces'2015 8,927,403'Selective deposition of noble metal thin films'2015 8,592,294'High temperature atomic layer deposition of dielectric oxides'2013 8,501,275'Enhanced deposition of noble metals'2013 8,309,173'System for controlling the sublimation of reactants'2012 8,025,922'Enhanced deposition of noble metals'2011 7,985,669'Selective deposition of noble metal thin films'2011 7,851,019'Method for controlling the sublimation of reactants'2010 7,824,492'Method of growing oxide thin films'2010 7,771,534'Method of growing oxide thin films'2010 7,771,533'Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide'2010 7,704,896'Atomic layer deposition of thin films on germanium'2010 7,666,773'Selective deposition of noble metal thin films'2010 7,601,225'System for controlling the sublimation of reactants'2009 7,476,618'Selective formation of metal layers in an integrated circuit'2009 7,045,406'Method of forming an electrode with adjusted work function'2006 7,038,284'Methods for making a dielectric stack in an integrated circuit'2006 6,806,145'Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer'2004 6,794,314'Method of forming ultrathin oxide layer'2004 6,759,325'Sealing porous structures'2004 6,660,660'Methods for making a dielectric stack in an integrated circuit'2003 6,492,283'Method of forming ultrathin oxide layer'2002 6,048,398'Device for epitaxially growing objects'2000 6,039,812'Device for epitaxially growing objects and method for such a growth'2000 5,879,462'Device for heat treatment of objects and a method for producing a susceptor'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2000Patents assigned to ABB RESEARCH LTD (3)· patent assignee history

1999–2000Based in Linkoping, SE· patent location history

2002–2021Based in Espoo, FI· patent location history

2004–2016Patents assigned to ASM INT (20)· patent assignee history

2004–2021Based in Helsinki, FI· patent location history

2012–2016Patents assigned to TUOMINEN MARKO (5)· patent assignee history

2016–2021Patents assigned to ASM IP HOLDING BV (17)· patent assignee history

2016–2021Patents assigned to ASM INT NV (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ASM INT	20	2004–2016
ASM IP HOLDING BV	17	2016–2021
ASM INT NV	8	2016–2021
TUOMINEN MARKOself	5	2012–2016
ABB RESEARCH LTD	3	1999–2000

Locations

Location	Patents	Span
Helsinki, FI	34	2004–2021
Espoo, FI	15	2002–2021
Linkoping, SE	3	1999–2000