LexDanaLexDanabeta
Inventor

Honggang Liu

Inventor
Beijing, CN

Overview

3→
Patents
2014–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices38%
H10DInorganic electric semiconductor devices38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
PatentTitleYear
10,644,100Dual-gate PMOS field effect transistor with InGaAs channel202010,192,963Composite gate dielectric layer applied to group III-V substrate and method for manufacturing the same20198,816,326'Semiconductor device and manufacturing method thereof'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2020Patents assigned to INST OF MICROELECTRONICS CAS (3)· patent assignee history
2014Patents assigned to CHEN DAPENG (1)· patent assignee history
2014Patents assigned to LIU HONGGANG (1)· patent assignee history
2014Patents assigned to LUO JUN (1)· patent assignee history
2014–2020Based in Beijing, CN· patent location history
2019Patents assigned to INST OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCE (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INST OF MICROELECTRONICS CAS32014–2020
CHEN DAPENG12014
INST OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCE12019
LIU HONGGANGself12014
LUO JUN12014
Locations
LocationPatentsSpan
Beijing, CN32014–2020