Inventor
Mary E. Rothwell
Inventor
Ridgefield, CT, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices17%
B82YSpecific uses or applications of nanostructures15%
H10NElectric solid-state devices not otherwise provided for13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
G06NComputing arrangements based on specific computational models8%
H01PWaveguides6%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients3%
C09JAdhesives3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
PatentTitleYear
10,767,084Enhanced adhesive materials and processes for 3D applications202010,008,655Suspended superconducting qubits20189,994,741Enhanced adhesive materials and processes for 3D applications20189,716,219'Suspended superconducting qubits'20179,531,055'Removal of spurious microwave modes via flip-chip crossover'20169,520,547'Chip mode isolation and cross-talk reduction through buried metal layers and through-vias'20169,455,392'Method of fabricating a coplanar waveguide device including removal of spurious microwave modes via flip-chip crossover'20169,397,283'Chip mode isolation and cross-talk reduction through buried metal layers and through-vias'20169,219,298'Removal of spurious microwave modes via flip-chip crossover'20159,177,814'Suspended superconducting qubits'20159,064,717'Lock and key through-via method for wafer level 3D integration and structures produced thereby'20158,954,125'Low-loss superconducting devices'20158,093,099'Lock and key through-via method for wafer level 3D integration and structures produced'20127,855,455'Lock and key through-via method for wafer level 3 D integration and structures produced'20106,890,599'Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displays'20056,632,536'Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displays'20036,380,101'Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2020Patents assigned to IBM (16)· patent assignee history
2002–2018Based in Ridgefield, CT, US· patent location history
2012–2020Patents assigned to ROTHWELL MARY E (5)· patent assignee history
2012–2020Patents assigned to PURUSHOTHAMAN SAMPATH (4)· patent assignee history
2012–2015Based in Armonk, NY, US· patent location history
2018–2020Patents assigned to HEDRICK JAMES L (2)· patent assignee history
2018–2020Patents assigned to MILLER ROBERT DENNIS (2)· patent assignee history
2018–2020Based in Yorktown Heights, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 16 | 2002–2020 |
| ROTHWELL MARY Eself | 5 | 2012–2020 |
| PURUSHOTHAMAN SAMPATH | 4 | 2012–2020 |
| HEDRICK JAMES L | 2 | 2018–2020 |
| MILLER ROBERT DENNIS | 2 | 2018–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ridgefield, CT, US | 13 | 2002–2018 |
| Yorktown Heights, New York, US | 2 | 2018–2020 |
| Armonk, New York, US | 2 | 2012–2015 |