Inventor
Mark V. Raymond
Inventor
Latham, NY, US
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
C30BSingle-crystal growth1%
G01RMeasuring electric variables1%
H01PWaveguides1%
H10BElectronic memory devices1%
PatentTitleYear
11,031,484Silicided gate structures202110,854,515Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation202010,727,308Gate contact structure for a transistor202010,643,893Surface area and Schottky barrier height engineering for contact trench epitaxy202010,643,894Surface area and Schottky barrier height engineering for contact trench epitaxy202010,593,593Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation202010,580,696Interconnects formed by a metal displacement reaction202010,490,641Methods of forming a gate contact structure for a transistor201910,483,363Methods of forming a gate contact structure above an active region of a transistor201910,283,372Interconnects formed by a metal replacement process201910,283,608Low resistance contacts to source or drain region of transistor201910,204,994Methods of forming a semiconductor device with a gate contact positioned above the active region201910,186,599Forming self-aligned contact with spacer first201910,157,794Integrated circuit structure with stepped epitaxial region201810,026,693Method, apparatus, and system for MOL interconnects without titanium liner20189,947,589Methods of forming a gate contact for a transistor above an active region and the resulting device20189,859,217'Middle of the line (MOL) metal contacts'20189,721,889'Middle of the line (MOL) metal contacts'20179,679,807'Method, apparatus, and system for MOL interconnects without titanium liner'20179,218,975'Methods of forming a replacement gate structure having a gate electrode comprised of a deposited intermetallic compound material'20159,184,263'Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices'20159,147,765'FinFET semiconductor devices with improved source/drain resistance and methods of making same'20159,142,633'Integrated circuits and methods for fabricating integrated circuits with silicide contacts on non-planar structures'20158,854,067'Circular transmission line methods compatible with combinatorial processing of semiconductors'20148,652,963'MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufacture'20147,683,439'Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same'20107,655,550'Method of making metal gate transistors'20106,743,668'Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber'20046,576,967'Semiconductor structure and process for forming a metal oxy-nitride dielectric layer'20036,518,070'Process of forming a semiconductor device and a semiconductor device'20036,096,127'Tuneable dielectric films having low electrical losses'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000Based in Albuquerque, NM, US· patent location history
2003–2004Patents assigned to MOTOROLA INC (3)· patent assignee history
2003–2010Based in Austin, TX, US· patent location history
2010Patents assigned to FREESCALE SEMICONDUCTOR INC (2)· patent assignee history
2014–2020Patents assigned to GLOBALFOUNDRIES INC (24)· patent assignee history
2014–2020Patents assigned to IBM (4)· patent assignee history
2014–2015Patents assigned to RAYMOND MARK (2)· patent assignee history
2014–2021Based in Schenectady, NY, US· patent location history
2017–2020Based in Latham, NY, US· patent location history
2017–2018Based in Albany, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 24 | 2014–2020 |
| IBM | 4 | 2014–2020 |
| MOTOROLA INC | 3 | 2003–2004 |
| FREESCALE SEMICONDUCTOR INC | 2 | 2010 |
| RAYMOND MARKself | 2 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Latham, New York, US | 13 | 2017–2020 |
| Schenectady, New York, US | 10 | 2014–2021 |
| Austin, Texas, US | 5 | 2003–2010 |
| Albany, New York, US | 2 | 2017–2018 |
| Albuquerque, NM, US | 1 | 2000 |