Inventor

Sadayoshi Matsui

Inventor

Tenri, JP

Overview

1986–2001

Patent span

Electricity

Primary field (CPC H)

Patents· 64 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light61%

G02BOptical elements, systems or apparatus6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%

B82YSpecific uses or applications of nanostructures3%

H10HInorganic light-emitting semiconductor devices having potential barriers3%

G01DMeasuring not specially adapted for a specific variable2%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%

Y02PClimate change mitigation technologies in the production or processing of goods2%

PatentTitleYear

6,206,969'Method and apparatus for fabricating semiconductor'2001 5,789,773'Semiconductor light-emitting device'1998 5,491,106'Method for growing a compound semiconductor and a method for producing a semiconductor laser'1996 5,450,237'Hyperresolution optical system'1995 5,360,762'Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device'1994 5,271,028'Semiconductor laser device'1993 5,255,279'Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device'1993 5,206,185'Semiconductor laser device'1993 5,111,470'Semiconductor laser device and a method of fabricating the same'1992 5,054,031'Semiconductor laser device'1991 5,042,044'Semiconductor laser device, a semiconductor wafer'1991 4,997,747'Method for the formation of a diffraction grating'1991 4,939,737'Scanning apparatus with refracting area of variable refractive index'1990 4,914,669'Semiconductor laser array apparatus'1990 4,908,831'Buried type semiconductor laser device'1990 4,908,830'Buried type semiconductor laser device'1990 4,903,274'Semiconductor laser array device'1990 4,901,328'Semiconductor VSIS laser'1990 4,890,293'Semiconductor laser device'1989 4,878,223'Semiconductor laser array device'1989 4,872,174'Semiconductor laser device having a grating structure'1989 4,870,651'Semiconductor light-emitting apparatus'1989 4,856,015'Semiconductor laser array device'1989 4,853,936'Index guided semiconductor laser device'1989 4,847,847'Semiconductor laser array'1989 4,842,679'Method for the production of semiconductor devices'1989 4,841,534'Buried type semiconductor laser device'1989 4,839,900'Buried type semiconductor laser device'1989 4,823,353'Semiconductor laser array apparatus'1989 4,819,240'Light modulator'1989 4,817,104'Semiconductor laser array device'1989 4,815,088'Semiconductor laser array device'1989 4,813,051'Semiconductor laser array device'1989 4,811,351'Semiconductor laser array device'1989 4,806,454'Method for the formation of a diffraction grating'1989 4,806,778'Micro-displacement measuring apparatus using a semiconductor laser'1989 4,803,690'Semiconductor laser'1989 4,799,227'Semiconductor laser device having a buried heterostructure'1989 4,799,225'Semiconductor laser array device'1989 4,791,651'Semiconductor laser array device'1988 4,780,175'Method for the production of an optical phase-shifting board'1988 4,772,082'Semiconductor laser array device'1988 4,771,432'Semiconductor laser which reduces the coherency of the oscillation spectrum'1988 4,771,434'Semiconductor laser device with an integrated light-detecting area'1988 4,768,201'Semiconductor laser array'1988 4,764,936'Semiconductor laser array device'1988 4,764,937'Semiconductor laser array device'1988 4,752,932'Branching optical waveguide for an index-guided semiconductor laser device'1988 4,751,709'Semiconductor laser array device'1988 4,747,109'Semiconductor laser array device'1988 4,745,616'Semiconductor laser device with a diffraction grating'1988 4,745,615'Semiconductor laser device with a diffraction grating'1988 4,742,526'Semiconductor laser array device'1988 4,730,329'Semiconductor laser device'1988 4,730,326'Semiconductor laser array device'1988 4,716,129'Method for the production of semiconductor devices'1987 4,716,570'Distributed feedback semiconductor laser device'1987 4,694,461'Semiconductor laser array'1987 4,692,206'Method for producing a semiconductor laser device having a buried heterostructure'1987 4,679,200'Semiconductor laser'1987 4,660,983'Apparatus for measuring reflectivities of resonator facets of semiconductor laser'1987 4,658,403'Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics'1987 4,655,597'Micro-displacement measuring apparatus using a semiconductor laser'1987 4,632,709'Process for preventing melt-back in the production of aluminum-containing laser devices'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2001Patents assigned to SHARP KK (64)· patent assignee history

1986–2001Based in Tenri, JP· patent location history

1987–1989Based in Nara, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SHARP KK	64	1986–2001

Locations

Location	Patents	Span
Tenri, JP	62	1986–2001
Nara, JP	2	1987–1989