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Inventor

SATORU NAGAO

Inventor
JP

Overview

2→
Patents
2023–2024
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth25%
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
PatentTitleYear
12,107,129Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device202411,664,428Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device2023

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2023–2024Patents assigned to MITSUBISHI CHEM CORP (2)· patent assignee history
2023–2024Based in JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI CHEM CORP22023–2024
Locations
LocationPatentsSpan
JP22023–2024