Inventor
Mihel Seitz
Inventor
Wappingers Falls, NY, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices38%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1035%
H10DInorganic electric semiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
PatentTitleYear
7,105,404'Method for fabricating a semiconductor structure'20067,034,352'DRAM with very shallow trench isolation'20066,960,514'Pitcher-shaped active area for field effect transistor and method of forming same'20056,849,496'DRAM with vertical transistor and trench capacitor memory cells and method of fabrication'20056,812,092'Method for fabricating transistors having damascene formed gate contacts and self-aligned borderless bit line contacts'20046,794,282'Three layer aluminum deposition process for high aspect ratio CL contacts'20046,759,292'Method for fabricating a trench capacitor'20046,746,933'Pitcher-shaped active area for field effect transistor and method of forming same'20046,724,054'Self-aligned contact formation using double SiN spacers'20046,716,734'Low temperature sidewall oxidation of W/WN/poly-gatestack'20046,706,634'Control of separation between transfer gate and storage node in vertical DRAM'20046,667,223'High aspect ratio high density plasma (HDP) oxide gapfill method in a lines and space pattern'20036,621,112'DRAM with vertical transistor and trench capacitor memory cells and methods of fabrication'20036,531,377'Method for high aspect ratio gap fill using sequential HDP-CVD'20036,509,226'Process for protecting array top oxide'20036,383,691'Photomask and method for increasing image aspect ratio while relaxing mask fabrication requirements'20026,319,840'For mol integration'20016,294,423'Method for forming and filling isolation trenches'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2005Patents assigned to IBM (5)· patent assignee history
2001Patents assigned to INFINEON TECHNOLOGIES CORP (1)· patent assignee history
2001–2005Based in Wappingers Falls, NY, US· patent location history
2002–2006Patents assigned to INFINEON TECHNOLOGIES AG (13)· patent assignee history
2004Patents assigned to INFINEON TECHNOLOGIES (1)· patent assignee history
2004–2006Based in Radebeul, DE· patent location history
2004Based in Dresden, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 13 | 2002–2006 |
| IBM | 5 | 2001–2005 |
| INFINEON TECHNOLOGIES | 1 | 2004 |
| INFINEON TECHNOLOGIES CORP | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wappingers Falls, New York, US | 12 | 2001–2005 |
| Radebeul, DE | 3 | 2004–2006 |
| Dresden, DE | 3 | 2004 |