Inventor
Masayuki Imaizumi
Inventor
Tokyo, JP
Overview
Patents· 37 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H01LSemiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
C23CCoating metallic material1%
C30BSingle-crystal growth1%
F16LPipes1%
G01KMeasuring temperature1%
Y10TTechnical subjects covered by former us classification1%
PatentTitleYear
10,886,372Silicon carbide semiconductor device202110,510,843Insulated gate silicon carbide semiconductor device and method for manufacturing same201910,418,444Silicon carbide semiconductor device201910,304,939SiC semiconductor device having pn junction interface and method for manufacturing the SiC semiconductor device20199,985,093Trench-gate type semiconductor device and manufacturing method therefor20189,954,072Silicon-carbide semiconductor device and manufacturing method thereof20189,741,797'Insulated gate silicon carbide semiconductor device and method for manufacturing same'20179,614,029'Trench-gate type semiconductor device and manufacturing method therefor'20179,577,086'Semiconductor device'20179,525,057'Semiconductor device'20169,515,145'Vertical MOSFET device with steady on-resistance'20169,496,344'Semiconductor device including well regions with different impurity densities'20169,425,261'Silicon-carbide semiconductor device and method for manufacturing the same'20169,362,391'Silicon carbide semiconductor device and method of manufacturing the same'20169,337,271'Silicon-carbide semiconductor device and manufacturing method therefor'20169,293,572'Power semiconductor device'20169,224,860'Trench-gate type semiconductor device and manufacturing method therefor'20159,214,458'Semiconductor device'20159,184,307'Silicon carbide semiconductor device'20159,111,751'Silicon carbide semiconductor device and method of fabricating same'20159,093,361'Semiconductor device'20159,006,819'Power semiconductor device and method for manufacturing same'20158,969,960'Power semiconductor device'20158,785,931'Semiconductor device'20148,753,951'Method for manufacturing silicon carbide semiconductor device'20148,723,259'Silicon carbide semiconductor device'20148,679,952'Method of manufacturing silicon carbide epitaxial wafer'20148,680,538'Silicon carbide semiconductor device'20148,304,901'Semiconductor device having a groove and a junction termination extension layer surrounding a guard ring layer'20128,252,672'Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same'20128,222,649'Semiconductor device and method of manufacturing the same'20128,093,598'Power semiconductor device'20128,026,160'Semiconductor device and semiconductor device manufacturing method'20117,928,469'MOSFET and method for manufacturing MOSFET'20117,708,029'Coupling member of pipe coupling'20107,285,465'Method of manufacturing a SiC vertical MOSFET'20077,029,969'Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2021Patents assigned to MITSUBISHI ELECTRIC CORP (36)· patent assignee history
2006–2021Based in Tokyo, JP· patent location history
2010Based in Kawasaki, JP· patent location history
2012–2016Patents assigned to IMAIZUMI MASAYUKI (18)· patent assignee history
2012–2016Patents assigned to MIURA NARUHISA (12)· patent assignee history
2012–2016Based in Chiyoda-ku, JP· patent location history
2014–2016Patents assigned to FURUKAWA AKIHIKO (9)· patent assignee history
2015–2016Patents assigned to HINO SHIRO (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 36 | 2006–2021 |
| IMAIZUMI MASAYUKIself | 18 | 2012–2016 |
| MIURA NARUHISA | 12 | 2012–2016 |
| FURUKAWA AKIHIKO | 9 | 2014–2016 |
| HINO SHIRO | 6 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 34 | 2006–2021 |
| Chiyoda-ku, JP | 2 | 2012–2016 |
| Kawasaki, JP | 1 | 2010 |