Inventor
Chien-Lan Hsueh
Inventor
Campbell, CA, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10NElectric solid-state devices not otherwise provided for28%
H10BElectronic memory devices21%
C23CCoating metallic material9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G11CStatic stores3%
B05DProcesses for applying fluent materials to surfaces, in general2%
H05KPrinted circuits2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
10,669,627Multi-layer deposition system and process202010,553,512Hybrid parylene-metal oxide layers for corrosion resistant coatings20209,276,203'Resistive switching layers including Hf-Al-O'20169,269,896'Confined defect profiling within resistive random memory access cells'20169,269,567'High productivity combinatorial processing using pressure-controlled one-way valves'20169,246,099'Low-temperature deposition of nitrides by UV-assisted ALD or CVD'20169,178,152'Metal organic chemical vapor deposition of embedded resistors for ReRAM cells'20159,065,040'Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition'20159,040,413'Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer'20159,029,192'Metal organic chemical vapor deposition of resistive switching layers for ReRAM cells'20159,018,068'Nonvolatile resistive memory element with a silicon-based switching layer'20159,006,696'Metal aluminum nitride embedded resistors for resistive random memory access cells'20158,969,129'ReRAM cells including TaXSiYN embedded resistors'20158,913,418'Confined defect profiling within resistive random memory access cells'20148,883,557'Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition'20148,853,046'Using TiON as electrodes and switching layers in ReRAM devices'20148,853,661'Metal aluminum nitride embedded resistors for resistive random memory access cells'20148,846,484'ReRAM stacks preparation by using single ALD or PVD chamber'20148,835,890'ReRAM cells including TaXSiYN embedded resistors'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2016Patents assigned to INTERMOLECULAR INC (17)· patent assignee history
2014–2016Patents assigned to SANDISK 3D LLC (9)· patent assignee history
2014–2016Patents assigned to TOSHIBA KK (9)· patent assignee history
2014Patents assigned to HSUEH CHIEN-LAN (2)· patent assignee history
2014–2016Based in Campbell, CA, US· patent location history
2020Patents assigned to HZO INC (2)· patent assignee history
2020Based in Draper, UT, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTERMOLECULAR INC | 17 | 2014–2016 |
| SANDISK 3D LLC | 9 | 2014–2016 |
| TOSHIBA KK | 9 | 2014–2016 |
| HSUEH CHIEN-LANself | 2 | 2014 |
| HZO INC | 2 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Campbell, California, US | 17 | 2014–2016 |
| Draper, UT, US | 2 | 2020 |