Inventor
Edward Haywood
Inventor
San Jose, CA, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
C23CCoating metallic material20%
H01LSemiconductor devices10%
H01GCapacitors4%
H10BElectronic memory devices4%
Y10TTechnical subjects covered by former us classification4%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
PatentTitleYear
9,607,904'Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices'20178,906,160'Vapor based processing system with purge mode'20148,900,418'Yttrium and titanium high-k dielectric films'20148,900,422'Yttrium and titanium high-K dielectric film'20148,901,708'Yttrium and titanium high-k dielectric films'20148,859,301'System and method for step coverage measurement'20148,835,273'High temperature ALD process of metal oxide for DRAM applications'20148,829,647'High temperature ALD process for metal oxide for DRAM applications'20148,809,160'Methods for forming high-K crystalline films and related devices'20148,737,036'Titanium based high-K dielectric films'20148,652,927'Integration of non-noble DRAM electrode'20148,647,943'Enhanced non-noble electrode layers for DRAM capacitor cell'20148,581,318'Enhanced non-noble electrode layers for DRAM capacitor cell'20138,574,985'Methods for depositing high-K dielectrics'20138,563,392'Method of forming an ALD material'20138,551,851'Titanium-based high-K dielectric films'20138,541,828'Methods for depositing high-K dielectrics'20138,530,322'Method of forming stacked metal oxide layers'20138,530,348'Integration of non-noble DRAM electrode'20138,486,727'System and method for step coverage measurement'20138,278,735'Yttrium and titanium high-k dielectric films'20127,968,452'Titanium-based high-K dielectric films'20117,927,947'Methods for depositing high-K dielectrics'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2017Patents assigned to INTERMOLECULAR INC (23)· patent assignee history
2011–2017Based in San Jose, CA, US· patent location history
2012–2014Patents assigned to CHEN HANHONG (9)· patent assignee history
2012–2014Patents assigned to HAYWOOD EDWARD (9)· patent assignee history
2012–2014Patents assigned to KUMAR PRAGATI (6)· patent assignee history
2013–2014Patents assigned to ELPIDA MEMORY INC (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTERMOLECULAR INC | 23 | 2011–2017 |
| CHEN HANHONG | 9 | 2012–2014 |
| HAYWOOD EDWARDself | 9 | 2012–2014 |
| ELPIDA MEMORY INC | 8 | 2013–2014 |
| KUMAR PRAGATI | 6 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 23 | 2011–2017 |