Inventor

Jack D. Kingsley

Inventor

Schenectady, NY, US

Overview

19→

Patents

1977–1997

Patent span

Physics

Primary field (CPC G)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G01Tprimary

G01TMeasurement of nuclear or x-radiation35%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation27%

H10DInorganic electric semiconductor devices12%

G03GElectrography8%

B29CShaping or joining of plastics4%

G01PMeasuring linear or angular speed, acceleration, deceleration, or shock4%

G21KHandling of particles or ionising radiation not otherwise provided for4%

H04NPictorial communication, e.g. television4%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%

PatentTitleYear

5,610,403'Solid state radiation imager with gate electrode plane shield wires'1997 5,587,591'Solid state fluoroscopic radiation imager with thin film transistor addressable array'1996 5,585,280'Method of fabricating solid state radiation imager with high integrity barrier layer'1996 5,463,225'Solid state radiation imager with high integrity barrier layer and method of fabricating'1995 5,340,988'High resolution radiation imaging system'1994 5,233,181'Photosensitive element with two layer passivation coating'1993 5,210,045'Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays'1993 5,187,369'High sensitivity, high resolution, solid state x-ray imaging device with barrier layer'1993 5,179,284'Solid state radiation imager having a reflective and protective coating'1993 5,153,438'Method of forming an x-ray imaging array and the array'1992 5,148,248'Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays'1992 4,597,001'Thin film field-effect transistors with tolerance to electrode misalignment'1986 4,563,584'Solid state detector'1986 4,233,514'Solid state radiation detector and arrays thereof'1980 4,200,790'Closed-chamber high-pressure gas ion-flow electro-radiography apparatus with direct-charge readout'1980 4,180,737'X-ray detector'1979 4,159,424'Trapezoidal scintillator for radiation detectors'1979 4,129,779'Photocontrolled ion-flow electron radiography apparatus with multi-layered mesh structure'1978 4,045,675'Solid state radiation detector system'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–1997Patents assigned to GEN ELECTRIC (19)· patent assignee history

1977–1996Based in Schenectady, NY, US· patent location history

1996–1997Based in Grand Junction, CO, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
GEN ELECTRIC	19	1977–1997

Locations

Location	Patents	Span
Schenectady, New York, US	17	1977–1996
Grand Junction, CO, US	2	1996–1997