Inventor

OLEG KONONCHUK

Inventor
FR

Overview

27→
Patents
2022–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10DInorganic electric semiconductor devices6%
H03HImpedance networks, e.g. resonant circuits5%
H10NElectric solid-state devices not otherwise provided for5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
A61BDiagnosis2%
H10KOrganic electric solid-state devices2%
PatentTitleYear
12,563,996Holding device for an assembly that is to be fractured202612,550,636Support substrate made of silicon suitable for radiofrequency applications and associated manufacturing method202612,469,743Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion202512,417,942Process for hydrophilically bonding substrates202512,198,975Semiconductor on insulator structure for a front side type imager202512,143,093Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device202412,142,517Method for transferring a useful layer from a donor substrate onto a support substrate by applying a predetermined stress202412,112,976Pseudo-substrate with improved efficiency of usage of single crystal material202412,108,678Hybrid structure for a surface acoustic wave device202412,002,690System for fracturing a plurality of wafer assemblies202412,002,697Method for detecting the splitting of a substrate weakened by implanting atomic species202411,923,239Structures for radiofrequency applications and related methods202411,881,429Method for transferring a useful layer onto a support substrate202411,876,015Method for transferring a useful layer to a carrier substrate202411,855,120Substrate for a front-side-type image sensor and method for producing such a substrate202311,711,065Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device202311,670,540Substrates including useful layers202311,626,319Semiconductor-on-insulator substrate for rf applications2023RE049365Structure for radio-frequency applications202311,424,156Removable structure and removal method using the structure202211,367,650Structures for radiofrequency applications and related methods202211,335,847Hybrid structure for a surface acoustic wave device202211,295,950Structure comprising single-crystal semiconductor islands and process for making such a structure202211,282,889Substrate for a front-side-type image sensor and method for producing such a substrate202211,276,605Process for smoothing the surface of a semiconductor-on-insulator substrate202211,251,265Carrier for a semiconductor structure202211,219,851Vertical furnace with device for trapping contaminants2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2026Patents assigned to SOITEC SILICON ON INSULATOR (27)· patent assignee history
2022Patents assigned to CENTRE NAT RECH SCIENT (1)· patent assignee history
2022Patents assigned to UNIV CLAUDE BERNARD LYON (1)· patent assignee history
2022–2026Based in FR· patent location history
2023–2025Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (4)· patent assignee history
2026Patents assigned to APPLIED MATERIALS INC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SOITEC SILICON ON INSULATOR272022–2026
COMMISSARIAT ENERGIE ATOMIQUE42023–2025
APPLIED MATERIALS INC12026
CENTRE NAT RECH SCIENT12022
UNIV CLAUDE BERNARD LYON12022
Locations
LocationPatentsSpan
FR272022–2026