LexDanaLexDanabeta
Inventor

DEYUAN XIAO

Inventor
CN

Overview

90→
Patents
2022–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 90 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices47%
H10DInorganic electric semiconductor devices24%
H01LSemiconductor devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G11CStatic stores6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
B82YSpecific uses or applications of nanostructures2%
G06NComputing arrangements based on specific computational models1%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use1%
PatentTitleYear
12,598,732Semiconductor structure and method for manufacturing memory202612,575,087Semiconductor structure and manufacturing method thereof202612,557,272Semiconductor structure and method for manufacturing same202612,557,270Semiconductor structure and method for manufacturing the same, memory and method for manufacturing the same202612,550,312Three-dimensional memory and formation method thereof202612,550,311Manufacturing method of semiconductor structure and semiconductor structure202612,543,306Semiconductor structure and manufacturing method thereof202612,526,979Memory and method for manufacturing memory202612,520,473Semiconductor structure and method for manufacturing semiconductor structure202612,513,893Semiconductor structure and method for fabricating same202512,513,879Method of manufacturing capacitor, capacitor, and memory202512,507,396Semiconductor structure and method for manufacturing same202512,495,539Semiconductor structure, method for manufacturing same, and memory202512,490,423Semiconductor structure and method for manufacturing semiconductor structure202512,490,420Semiconductor structure and manufacturing method therefor, and memory202512,471,267Transistor and manufacturing method thereof, and memory202512,471,314Semiconductor structure and fabrication method thereof202512,471,274Semiconductor structure202512,464,711Three-dimensional memory and method for forming same202512,446,212Semiconductor structure, method for manufacturing same and memory202512,446,213Method for forming semiconductor device and semiconductor device202512,446,206Three-dimensional semiconductor structure and formation method thereof202512,446,207Semiconductor device having bottom bit line and narrow channel, and forming method thereof202512,426,251Semiconductor structure, method for manufacturing semiconductor structure, and memory202512,426,234Semiconductor structure for DRAM having a pillar lower electrode and formation method thereof202512,426,256Semiconductor structure including a plurality of semicondcutor pillars and bit line isolation trenches and method for forming same202512,426,250Semiconductor structure, method for manufacturing same and memory202512,426,255Semiconductor structure, method for manufacturing semiconductor structure, and memory202512,426,232Semiconductor structure with semiconductor pillars and method for manufacturing same202512,426,249Semiconductor structure and method for manufacturing same, and memory202512,426,236Semiconductor structure, method for manufacturing same and memory202512,419,037Semiconductor structure and method for manufacturing semiconductor structure202512,419,034Vertical gate all around transistor having dual gate structures202512,414,285Semiconductor structure and manufacturing method thereof202512,414,291Semiconductor structure and manufacturing method thereof, and memory202512,408,322Semiconductor structure and method for manufacturing the same202512,408,326Semiconductor structure and formation method thereof, and memory202512,408,378Semiconductor structure and method for manufacturing same202512,402,294Semiconductor structure and fabrication method thereof202512,402,303Semiconductor structure having a plurality of bit lines spaced apart from each other in a first direction and extend in a second direction202512,396,160Method for fabricating semiconductor structure and semiconductor structure202512,396,161Semiconductor structure including bit line compose of a metal layer and a metal silicide layer and manufacturing method thereof202512,389,589Semiconductor device and method for manufacturing semiconductor device202512,389,651Semiconductor structure and fabrication method thereof202512,389,586Semiconductor memory device and method for manufacturing the same including a plurality of mutually perpendicular trenches having the same depth202512,382,625Semiconductor structure and manufacturing method thereof202512,382,6242T0C semiconductor structure202512,382,627Semiconductor structure and forming method thereof202512,376,280Memory and memory forming method202512,376,289Semiconductor structure and method for fabricating same202512,376,283Semiconductor structure, method for manufacturing same202512,376,281Manufacturing method of semiconductor structure and semiconductor structure202512,369,311Semiconductor device and manufacturing method thereof202512,369,313Semiconductor structure and method for fabricating the same202512,369,297Semiconductor structure and manufacturing method thereof202512,369,295Semiconductor structure and manufacturing method thereof202512,369,305Semiconductor structure, method for manufacturing same and memory202512,363,889Manufacturing method of semiconductor structure and semiconductor structure202512,356,605Memory device and manufacturing method therefor202512,356,666Semiconductor structure and fabrication method thereof202512,349,333Manufacturing method of semiconductor structure and semiconductor structure202512,349,332Manufacturing method of semiconductor structure and semiconductor structure202512,349,334Semiconductor structure and method for manufacturing same202512,342,529Semiconductor structure and manufacturing method thereof and memory202512,342,534Method for fabricating a semiconductor structure with pillar array and semiconductor structure202512,342,524Method for fabricating semiconductor device and semiconductor device202512,336,164Semiconductor structure and method for manufacturing semiconductor structure202512,336,169Semiconductor structure and manufacturing method thereof202512,336,162Memory, semiconductor structure and formation method thereof202512,324,141Memory and method for forming same202512,317,484Method for forming a first and a second transistors array having plurality of first and semiconductor pillars202512,317,483Semiconductor structure having isolation structure embedded in the groove of the bit line202512,317,473Semiconductor device having plurality of trenches with different depth202512,317,472Method for manufacturing semiconductor device, semiconductor device, and stack device202512,309,998Semiconductor structure and method for manufacturing semiconductor structure202512,309,992Semiconductor structure and formation method thereof, and memory202512,310,005Semiconductor structure and manufacturing method thereof202512,309,999Semiconductor structure and manufacturing method thereof202512,309,997Semiconductor structure and method for fabricating same202512,300,744Semiconductor structure and manufacturing method thereof202512,262,523Manufacturing method of semiconductor structure and semiconductor structure202512,225,707Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memory202512,225,718Semiconductor structure and method for forming semiconductor structure202512,137,550Semiconductor structure with a first lower electrode layer and a second lower electrode layer and method for manufacturing same202412,101,924Semiconductor structure and method for manufacturing same202412,096,619Semiconductor structure and manufacturing method thereof202412,096,627Stacked neural device structure and manufacturing method thereof202411,854,862Semiconductor structure and manufacturing method thereof202311,637,189Semiconductor structure and forming method thereof202311,398,490Stacked neural device structure and manufacturing method thereof2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2024Patents assigned to SIEN QINGDAO INTEGRATED CIRCUITS CO LTD (2)· patent assignee history
2022–2026Based in CN· patent location history
2023–2026Patents assigned to CHANGXIN MEMORY TECH INC (88)· patent assignee history
2025–2026Patents assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (18)· patent assignee history
2025Patents assigned to CHANGXIN JIDIAN BEIJING MEMORY TECH CO LTD (1)· patent assignee history
2025Patents assigned to CHANGXIN MEMORY TEHCNOLOGIES INC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CHANGXIN MEMORY TECH INC882023–2026
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH182025–2026
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD22022–2024
CHANGXIN JIDIAN BEIJING MEMORY TECH CO LTD12025
CHANGXIN MEMORY TEHCNOLOGIES INC12025
Locations
LocationPatentsSpan
CN902022–2026