Inventor

Takashi Yunogami

Inventor
Niiza, JP

Overview

25→
Patents
1992–2010
Patent span
Electricity
Primary field (CPC H)

Patents· 25 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
H10DInorganic electric semiconductor devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H10BElectronic memory devices10%
C23FNon-mechanical removal of metallic material from surface7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
C23CCoating metallic material6%
C23GCleaning or de-greasing of metallic material by chemical methods other than electrolysis6%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
PatentTitleYear
7,737,023'Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device'20107,419,902'Method of manufacture of semiconductor integrated circuit'20087,264,677'Process for treating solid surface and substrate surface'20077,025,896'Process for treating solid surface and substrate surface'20066,998,325'Method for manufacturing semiconductor device'20066,774,020'Semiconductor device and method of manufacturing the same'20046,756,262'Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof'20046,613,242'Process for treating solid surface and substrate surface'20036,607,988'Manufacturing method of semiconductor integrated circuit device'20036,555,464'Semiconductor device and method of manufacturing the same'20036,537,461'Process for treating solid surface and substrate surface'20036,528,400'Method of manufacturing a semiconductor device'20036,506,674'Method of manufacturing a semiconductor integrated circuit device'20036,497,992'Process for manufacturing semiconductor integrated circuit device'20026,458,602'Method for fabricating semiconductor integrated circuit device'20026,451,665'Method of manufacturing a semiconductor integrated circuit'20026,432,835'Process for fabricating an integrated circuit device having a capacitor with an electrode formed at a high aspect ratio'20026,426,255'Process for making a semiconductor integrated circuit device having a dynamic random access memory'20026,340,632'Method of manufacturing a semiconductor device'20026,326,218'Semiconductor integrated circuit and its manufacturing method'20016,057,081'Process for manufacturing semiconductor integrated circuit device'20005,314,839'Solid state device fabrication method including a surface treatment step with a neutral particle beam with an energy between 10ev and 100ev'19945,284,544'Apparatus for and method of surface treatment for microelectronic devices'19945,241,186'Surface treatment method and apparatus therefor'19935,115,130'Surface measuring method and apparatus'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2004Patents assigned to HITACHI LTD (19)· patent assignee history
1992–1994Based in Kokubunji, JP· patent location history
2000–2010Based in Niiza, JP· patent location history
2003Patents assigned to NEC CORP (1)· patent assignee history
2003Based in Tokyo, JP· patent location history
2003Based in Sagamihara, JP· patent location history
2004–2010Patents assigned to RENESAS TECH CORP (6)· patent assignee history
2006Based in Saitama, JP· patent location history
2008Patents assigned to HITACHI ULSI SYS CO LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD191992–2004
RENESAS TECH CORP62004–2010
HITACHI ULSI SYS CO LTD12008
NEC CORP12003
Locations
LocationPatentsSpan
Niiza, JP182000–2010
Kokubunji, JP31992–1994
Saitama, JP12006
Tokyo, JP12003
Sagamihara, JP12003