Inventor
Ahmed Abou-Kandil
Inventor
Elmsford, NY, US
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices26%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation19%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution19%
Y02PClimate change mitigation technologies in the production or processing of goods9%
C23CCoating metallic material6%
B82YSpecific uses or applications of nanostructures4%
C01BNon-metallic elements4%
H10DInorganic electric semiconductor devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
10,297,709Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same201910,283,668Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same201910,230,015Temperature grading for band gap engineering of photovoltaic devices20199,142,471'Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh'20159,105,805'Enhancing efficiency in solar cells by adjusting deposition power'20159,040,340'Temperature grading for band gap engineering of photovoltaic devices'20158,927,857'Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices'20158,916,409'Photovoltaic device using nano-spheres for textured electrodes'20148,900,538'Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh'20148,866,003'Solar cell employing an enhanced free hole density p-doped material and methods for forming the same'20148,859,321'Mixed temperature deposition of thin film silicon tandem cells'20148,828,504'Deposition of hydrogenated thin film'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2019Patents assigned to IBM (12)· patent assignee history
2014–2015Patents assigned to ABOU-KANDIL AHMED (7)· patent assignee history
2014–2015Patents assigned to SADANA DEVENDRA K (6)· patent assignee history
2014–2015Patents assigned to KIM JEEHWAN (5)· patent assignee history
2014–2015Patents assigned to FOGEL KEITH E (4)· patent assignee history
2014–2019Based in Elmsford, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 12 | 2014–2019 |
| ABOU-KANDIL AHMEDself | 7 | 2014–2015 |
| SADANA DEVENDRA K | 6 | 2014–2015 |
| KIM JEEHWAN | 5 | 2014–2015 |
| FOGEL KEITH E | 4 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Elmsford, New York, US | 12 | 2014–2019 |