Inventor
Leonardo Ravazzi
Inventor
Dalmine, IT
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores47%
G06FElectric digital data processing27%
H10DInorganic electric semiconductor devices20%
H10BElectronic memory devices7%
PatentTitleYear
6,507,067'Flash EEPROM with integrated device for limiting the erase source voltage'20036,369,406'Method for localizing point defects causing leakage currents in a non-volatile memory device'20026,362,053'Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide'20026,067,250'Method and apparatus for localizing point defects causing leakage currents in a non-volatile memory device'20005,920,776'Method of making asymmetric nonvolatile memory cell'19995,793,675'Method of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memories'19985,712,816'Method for evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memories'19985,712,814'Nonvolatile memory cell and a method for forming the same'19985,604,699'Method of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memories'19975,515,318'Method of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memories'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2003Patents assigned to ST MICROELECTRONICS SRL (8)· patent assignee history
1996–2003Based in Dalmine, IT· patent location history
1998–1999Patents assigned to SGS THOMSON MICROELECTRONICS (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ST MICROELECTRONICS SRL | 8 | 1996–2003 |
| SGS THOMSON MICROELECTRONICS | 2 | 1998–1999 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dalmine, IT | 10 | 1996–2003 |