Inventor
Dietrich Ristow
Inventor
Neubiberg, DE
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices42%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
PatentTitleYear
5,960,269'Method for manufacturing a field effect transistor using an auxiliary layer deposited at a very flat incident angle'19995,298,444'Method for manufacturing a field effect transistor'19944,425,573'Metal-semiconductor-field effect transistor (MESFET) with lightly doped drain contact region for higher voltage breakdown'19844,389,280'Method of manufacturing very thin semiconductor chips'19834,325,747'Method of making a MESFET having same type conductivity for source, drain, and gate regions'19824,292,643'High cut-off frequency planar Schottky diode having a plurality of finger-like projections arranged in parallel in a transmission line'1981Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1981–1999Patents assigned to SIEMENS AG (6)· patent assignee history
1981–1999Based in Neubiberg, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SIEMENS AG | 6 | 1981–1999 |
Locations
| Location | Patents | Span |
|---|---|---|
| Neubiberg, DE | 6 | 1981–1999 |