Inventor
Gyu-hee Park
Inventor
Hwaseong-si, KR
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H01LSemiconductor devices14%
H10DInorganic electric semiconductor devices14%
C23CCoating metallic material12%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium11%
H04NPictorial communication, e.g. television8%
H10BElectronic memory devices8%
C09DCoating compositions, e.g. paints, varnishes or lacquers5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
10,992,956Image encoding method using a skip mode, and a device using the method202110,986,348Inter-prediction method and apparatus for same202110,986,359Method and device for inducing motion information between temporal points of sub prediction unit202110,944,962Method and device for encoding/decoding image by using geometrically changed image202110,917,647Image encoder and decoder using unidirectional prediction202110,917,645Inter-prediction method and apparatus for same202110,847,362Method of fabricating semiconductor device202010,752,645Method of forming a thin film202010,600,643Method of forming thin film and method of manufacturing integrated circuit device using the same202010,468,264Method of fabricating semiconductor device201910,329,312Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device201910,259,836Methods of forming thin film and fabricating integrated circuit device using niobium compound201910,242,877Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the same201910,224,200Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device20199,923,047'Method for manufacturing a capacitor for semiconductor devices'20189,790,246'Nickel compound and method of forming thin film using the nickel compound'20179,637,511'Method of forming thin film using a heterostructured nickel compound'20179,391,089'Method of manufacturing semiconductor device including nickel-containing film'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (12)· patent assignee history
2016–2020Based in Hwaseong-si, KR· patent location history
2017–2020Patents assigned to ADEKA CORP (3)· patent assignee history
2019Patents assigned to AIR LIQUIDE (1)· patent assignee history
2021Patents assigned to UNIV INDUSTRY COOPERATION GROUP KYUNG HEE UNIV (6)· patent assignee history
2021Patents assigned to ELECTRONICS & TELECOMMUNICATIONS RES INST (5)· patent assignee history
2021Based in Seongnam-si, KR· patent location history
2021Based in Gyeonggi-do, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 12 | 2016–2020 |
| UNIV INDUSTRY COOPERATION GROUP KYUNG HEE UNIV | 6 | 2021 |
| ELECTRONICS & TELECOMMUNICATIONS RES INST | 5 | 2021 |
| ADEKA CORP | 3 | 2017–2020 |
| AIR LIQUIDE | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 12 | 2016–2020 |
| Seongnam-si, KR | 5 | 2021 |
| Gyeonggi-do, KR | 1 | 2021 |