Inventor
Robert E. Bendernagel
Inventor
Carmel, NY, US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1050%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1038%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
PatentTitleYear
6,800,518'Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering'20045,159,429'Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same'19925,061,652'Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure'19914,701,998'Method for fabricating a bipolar transistor'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–2004Patents assigned to IBM (4)· patent assignee history
1987–1992Based in Carmel, NY, US· patent location history
2004Based in Hopewell Junction, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 4 | 1987–2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Carmel, New York, US | 3 | 1987–1992 |
| Hopewell Junction, New York, US | 1 | 2004 |