Inventor

Dan Maydan

Inventor

Los Altos Hills, CA, US

Overview

1977–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 100 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%

C23CCoating metallic material15%

H01JElectric discharge tubes or discharge lamps14%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%

H01LSemiconductor devices4%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%

H02SGeneration of electric power by conversion of infrared radiation, visible light or ultraviolet light, e.g. using photovoltaic [pv] modules4%

Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications4%

H10DInorganic electric semiconductor devices3%

PatentTitleYear

11,038,072Shingled solar cell module2021 10,861,999Shingled solar cell module comprising hidden tap interconnects2020 10,090,430System for manufacturing a shingled solar cell module2018 9,947,820Shingled solar cell panel employing hidden taps2018 9,882,077'Shingled solar cell module'2018 9,876,132Shingled solar cell module2018 9,780,253'Shingled solar cell module'2017 9,484,484'Shingled solar cell module'2016 9,401,451'Shingled solar cell module'2016 9,397,252'Shingled solar cell module'2016 9,356,184'Shingled solar cell module'2016 7,871,469'Method for fabricating waveguides'2011 7,439,191'Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications'2008 7,431,585'Apparatus and method for heating substrates'2008 7,381,052'Apparatus and method for heating substrates'2008 7,122,962'Plasma display panel with a low K dielectric layer'2006 7,110,629'Optical ready substrates'2006 7,087,179'Optical integrated circuits (ICs)'2006 7,072,534'Optical ready substrates'2006 7,043,106'Optical ready wafers'2006 6,927,169'Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing'2005 6,893,907'Fabrication of silicon-on-insulator structure using plasma immersion ion implantation'2005 6,869,838'Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications'2005 6,829,056'Monitoring dimensions of features at different locations in the processing of substrates'2004 6,825,134'Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow'2004 6,770,134'Method for fabricating waveguides'2004 6,721,162'Electrostatic chuck having composite dielectric layer and method of manufacture'2004 6,610,354'Plasma display panel with a low k dielectric layer'2003 6,576,110'Coated anode apparatus and associated method'2003 6,514,850'Interface with dielectric layer and method of making'2003 6,503,375'Electroplating apparatus using a perforated phosphorus doped consumable anode'2003 6,468,601'Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology'2002 6,444,277'Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates'2002 6,414,834'Dielectric covered electrostatic chuck'2002 6,372,633'Method and apparatus for forming metal interconnects'2002 6,338,874'Method for multilayer CVD processing in a single chamber'2002 6,170,428'Symmetric tunable inductively coupled HDP-CVD reactor'2001 6,167,834'Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process'2001 6,109,206'Remote plasma source for chamber cleaning'2000 6,108,189'Electrostatic chuck having improved gas conduits'2000 6,055,927'Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology'2000 6,040,022'PECVD of compounds of silicon from silane and nitrogen'2000 RE036623'Process for PECVD of silicon oxide using TEOS decomposition'2000 6,020,270'Bomine and iodine etch process for silicon and silicides'2000 5,904,776'Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck'1999 5,892,328'High-power, plasma-based, reactive species generator'1999 5,885,358'Gas injection slit nozzle for a plasma process reactor'1999 5,882,165'Multiple chamber integrated process system'1999 5,874,362'Bromine and iodine etch process for silicon and silicides'1999 5,871,811'Method for protecting against deposition on a selected region of a substrate'1999 5,855,681'Ultra high throughput wafer vacuum processing system'1999 5,849,136'High frequency semiconductor wafer processing apparatus and method'1998 5,788,778'Deposition chamber cleaning technique using a high power remote excitation source'1998 5,773,100'PECVD of silicon nitride films'1998 5,755,886'Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing'1998 5,753,133'Method and apparatus for etching film layers on large substrates'1998 5,746,875'Gas injection slit nozzle for a plasma process reactor'1998 5,720,818'Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck'1998 5,643,394'Gas injection slit nozzle for a plasma process reactor'1997 5,618,382'High-frequency semiconductor wafer processing apparatus and method'1997 5,567,476'Multi-step chemical vapor deposition method for thin film transistors'1996 5,441,768'Multi-step chemical vapor deposition method for thin film transistors'1995 5,399,387'Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates'1995 5,380,566'Method of limiting sticking of body to susceptor in a deposition treatment'1995 5,362,526'Plasma-enhanced CVD process using TEOS for depositing silicon oxide'1994 5,354,715'Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process'1994 5,300,460'UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers'1994 5,294,320'Apparatus for cleaning a shield in a physical vapor deposition chamber'1994 5,292,393'Multichamber integrated process system'1994 5,280,983'Semiconductor processing system with robotic autoloader and load lock'1994 5,244,841'Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing'1993 5,224,809'Semiconductor processing system with robotic autoloader and load lock'1993 5,223,457'High-frequency semiconductor wafer processing method using a negative self-bias'1993 5,215,619'Magnetic field-enhanced plasma etch reactor'1993 5,210,466'VHF/UHF reactor system'1993 5,204,288'Method for planarizing an integrated circuit structure using low melting inorganic material'1993 5,186,718'Staged-vacuum wafer processing system and method'1993 5,098,198'Wafer heating and monitor module and method of operation'1992 5,000,113'Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process'1991 4,962,063'Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing'1990 4,951,601'Multi-chamber integrated process system'1990 4,911,597'Semiconductor processing system with robotic autoloader and load lock'1990 4,892,753'Process for PECVD of silicon oxide using TEOS decomposition'1990 4,872,947'CVD of silicon oxide using TEOS decomposition and in-situ planarization process'1989 4,854,263'Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films'1989 4,842,683'Magnetic field-enhanced plasma etch reactor'1989 4,668,338'Magnetron-enhanced plasma etching process'1987 4,668,365'Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition'1987 4,618,262'Laser interferometer system and method for monitoring and controlling IC processing'1986 4,412,885'Materials and methods for plasma etching of aluminum and aluminum alloys'1983 4,383,885'Reactive sputter etching of polysilicon utilizing a chlorine etch gas'1983 4,376,672'Materials and methods for plasma etching of oxides and nitrides of silicon'1983 4,310,380'Plasma etching of silicon'1982 4,298,443'High capacity etching apparatus and method'1981 4,253,029'Mask structure for x-ray lithography'1981 4,244,799'Fabrication of integrated circuits utilizing thick high-resolution patterns'1981 4,227,088'High speed computer assisted tomography'1980 4,185,202'X-ray lithography'1980 4,162,528'X-ray-fluorescence measurement of thin film thicknesses'1979 4,037,111'Mask structures for X-ray lithography'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–1983Patents assigned to BELL TELEPHONE LABOR INC (9)· patent assignee history

1977–1983Based in Short Hills, NJ, US· patent location history

1983–2008Patents assigned to APPLIED MATERIALS INC (72)· patent assignee history

1983–2021Based in Los Altos Hills, CA, US· patent location history

1983–2018Based in Los Altos, CA, US· patent location history

1996–2002Patents assigned to APPLIED KOMATSU TECHNOLOGY INC (6)· patent assignee history

2016–2021Patents assigned to SUNPOWER CORP (11)· patent assignee history

2016Patents assigned to COGENRA SOLAR INC (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
APPLIED MATERIALS INC	72	1983–2008
SUNPOWER CORP	11	2016–2021
BELL TELEPHONE LABOR INC	9	1977–1983
APPLIED KOMATSU TECHNOLOGY INC	6	1996–2002
COGENRA SOLAR INC	3	2016

Locations

Location	Patents	Span
Los Altos Hills, California, US	86	1983–2021
Short Hills, New Jersey, US	9	1977–1983
Los Altos, California, US	5	1983–2018