Inventor

Benjamin Schmiege

Inventor
Santa Clara, CA, US

Overview

26→
Patents
2015–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H01LSemiconductor devices19%
C23FNon-mechanical removal of metallic material from surface18%
H01JElectric discharge tubes or discharge lamps13%
C23CCoating metallic material11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B05BSpraying apparatus3%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium3%
C30BSingle-crystal growth3%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
11,094,544Methods of forming self-aligned vias202110,906,925Ruthenium precursors for ALD and CVD thin film deposition and uses thereof202110,760,159Methods and apparatus for depositing yttrium-containing films202010,643,840Selective deposition defects removal by chemical etch202010,643,838In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD202010,633,743System and method for controllable non-volatile metal removal202010,577,386Ruthenium precursors for ALD and CVD thin film deposition and uses thereof202010,465,294Oxide and metal removal201910,410,865Methods of forming self-aligned vias201910,323,054Precursors for deposition of metal, metal nitride and metal oxide based films of transition metals201910,297,462Methods of etching films comprising transition metals201910,242,885Selective dry etching of metal films comprising multiple metal oxides201910,233,547Methods of etching films with reduced surface roughness201910,083,834Methods of forming self-aligned vias201810,000,853System and method for controllable non-volatile metal removal20189,896,770'Methods of etching films with reduced surface roughness'20189,881,787'Deposition methods for uniform and conformal hybrid titanium oxide films'20189,799,533'Methods of etching films comprising transition metals'20179,611,552'System and method for controllable non-volatile metal removal'20179,540,736'Methods of etching films with reduced surface roughness'20179,528,183'Cobalt removal for chamber clean or pre-clean process'20169,514,933'Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition'20169,449,843'Selectively etching metals and metal nitrides conformally'20169,390,940'Methods of etching films comprising transition metals'20169,309,598'Oxide and metal removal'20169,005,704'Methods for depositing films comprising cobalt and cobalt nitrides'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2021Patents assigned to APPLIED MATERIALS INC (23)· patent assignee history
2015–2021Based in Santa Clara, CA, US· patent location history
2017–2020Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC232015–2021
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC32017–2020
Locations
LocationPatentsSpan
Santa Clara, California, US262015–2021