Inventor
Osamu Arisumi
Inventor
Yokohama, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H10BElectronic memory devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H01LSemiconductor devices9%
C23CCoating metallic material4%
B05BSpraying apparatus2%
B05CApparatus for applying fluent materials to surfaces, in general2%
C04BLime, magnesia2%
H01GCapacitors2%
PatentTitleYear
10,490,565Semiconductor device and method for manufacturing same201910,411,028Semiconductor device and method for manufacturing same20199,837,430Semiconductor memory device and method for manufacturing same20179,240,494'Semiconductor device and method for fabricating semiconductor device'20168,766,350'Semiconductor device and method for fabricating semiconductor device'20148,119,196'Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method'20127,884,413'Semiconductor device'20117,618,876'Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step'20097,527,982'Manufacturing method of a semiconductor device including a crystalline insulation film made of perovskite type oxide'20097,514,338'Method of manufacturing a semiconductor device'20097,504,680'Semiconductor device and mask pattern'20097,473,565'Semiconductor device and method of manufacturing the same'20097,416,955'Method of manufacturing a semiconductor device'20087,407,864'Polysilazane perhydride solution and method of manufacturing a semiconductor device using the same'20087,259,094'Apparatus and method for heat treating thin film'20077,105,400'Manufacturing method of semiconductor device'20067,031,138'Ferroelectric capacitor and process for its manufacture'20066,924,521'Semiconductor device comprising a capacitor using a ferroelectric material'20056,351,006'Ferroelectric capacitor with means to prevent deterioration'20025,886,385'Semiconductor device and manufacturing method thereof'19995,698,869'Insulated-gate transistor having narrow-bandgap-source'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2016Patents assigned to TOSHIBA KK (16)· patent assignee history
1997–2009Based in Tokyo, JP· patent location history
1999–2012Based in Yokohama, JP· patent location history
2005–2009Patents assigned to INFINEON TECHNOLOGIES AG (4)· patent assignee history
2006Based in Kanagawa, JP· patent location history
2012–2016Patents assigned to ARISUMI OSAMU (3)· patent assignee history
2014–2016Patents assigned to IINUMA TOSHIHIKO (2)· patent assignee history
2014–2016Based in Mie, JP· patent location history
2017–2019Patents assigned to TOSHIBA MEMORY CORP (3)· patent assignee history
2017–2019Based in Kuwana, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 16 | 1997–2016 |
| INFINEON TECHNOLOGIES AG | 4 | 2005–2009 |
| ARISUMI OSAMUself | 3 | 2012–2016 |
| TOSHIBA MEMORY CORP | 3 | 2017–2019 |
| IINUMA TOSHIHIKO | 2 | 2014–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 12 | 1999–2012 |
| Kuwana, JP | 3 | 2017–2019 |
| Tokyo, JP | 3 | 1997–2009 |
| Mie, JP | 2 | 2014–2016 |
| Kanagawa, JP | 1 | 2006 |