Inventor

Yuniarto Widjaja

Inventor
San Jose, CA, US

Overview

192→
Patents
2006–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 192 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores25%
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices22%
H01LSemiconductor devices18%
H10NElectric solid-state devices not otherwise provided for4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
G06FElectric digital data processing2%
H01QAntennas, i.e. radio aerials1%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
B82YSpecific uses or applications of nanostructures0%
PatentTitleYear
11,133,313Asymmetric semiconductor memory device having electrically floating body transistor202111,100,994Content addressable memory device having electrically floating body transistor202111,063,048Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor202111,037,929Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making202111,031,401Memory device comprising electrically floating body transistor202111,018,136Method of maintaining the state of semiconductor memory having electrically floating body transistor202111,011,232Memory cells, memory cell arrays, methods of using and methods of making202111,004,512Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating202110,991,698Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle202110,991,697NAND string utilizing floating body memory cell202110,978,455Memory device having electrically floating body transistor202110,923,183Memory device comprising electrically floating body transistor202110,916,297Memory device comprising an electrically floating body transistor202110,867,676Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating202010,861,548Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating202010,854,745Memory device comprising an electrically floating body transistor and methods of using202010,839,905Content addressable memory device having electrically floating body transistor202010,825,520Semiconductor memory having both volatile and non-volatile functionality and method of operating202010,818,354Semiconductor memory having volatile and multi-bit non-volatile functionality and method of operating202010,804,276Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor202010,797,055Memory cell comprising first and second transistors and methods of operating202010,783,952Systems and methods for reducing standby power in floating body memory devices202010,748,904Method of maintaining the state of semiconductor memory having electrically floating body transistor202010,734,076Memory cells, memory cell arrays, methods of using and methods of making202010,707,209Asymmetric semiconductor memory device having electrically floating body transistor202010,644,001Semiconductor memory device having an electrically floating body transistor202010,644,002Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle202010,629,599Memory device having electrically floating body transistor202010,622,069Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating202010,615,163Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making202010,593,675Method of maintaining the state of semiconductor memory having electrically floating body transistor202010,580,482Memory device comprising electrically floating body transistor202010,553,683MOSFET and memory cell having improved drain current through back bias application202010,553,281Memory cells, memory cell arrays, methods of using and methods of making202010,546,860NAND string utilizing floating body memory cell202010,529,424Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating202010,529,853Memory device comprising an electrically floating body transistor and methods of operating202010,522,213Memory device comprising an electrically floating body transistor201910,515,968Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor201910,504,585Scalable floating body memory cell for memory compilers and method of using floating body memories with memory compilers201910,497,443Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating201910,468,102Semiconductor memory having both volatile and non-volatile functionality and method of operating201910,461,084Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making201910,461,083Memory device comprising electrically floating body transistor201910,453,847Method of maintaining the state of semiconductor memory having electrically floating body transistor201910,403,361Memory cells, memory cell arrays, methods of using and methods of making201910,388,378Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating201910,373,685Content addressable memory device having electrically floating body transistor201910,355,1213D semiconductor device with stacked memory201910,354,718Systems and methods for reducing standby power in floating body memory devices201910,347,636Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making201910,340,006Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating201910,340,276Method of maintaining the state of semiconductor memory having electrically floating body transistor2019RE047381Forming semiconductor cells with regions of varying conductivity201910,249,368Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating201910,242,739Memory cells, memory cell arrays, methods of using and methods of making201910,210,934Semiconductor memory having volatile and multi-bit non-volatile functionality and method of operating201910,211,209Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle201910,204,684Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating201910,204,908Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making201910,192,872Memory device having electrically floating body transistor201910,181,471Memory cell comprising first and second transistors and methods of operating201910,163,907Method of maintaining the state of semiconductor memory having electrically floating body transistor201810,157,663Systems and methods for reducing standby power in floating body memory devices201810,141,315Semiconductor memory device having an electrically floating body transistor201810,141,046Memory device comprising an electrically floating body transistor201810,115,451Memory device comprising electrically floating body transistor201810,109,349Memory cells, memory cell arrays, methods of using and methods of making201810,103,148NAND string utilizing floating body memory cell201810,103,149Memory device comprising electrically floating body transistor201810,079,236Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor201810,079,301Memory device comprising an electrically floating body transistor and methods of using201810,074,653Asymmetric semiconductor memory device having electrically floating body transistor201810,056,387Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making201810,032,514Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating201810,032,776Method of maintaining the state of semiconductor memory having electrically floating body transistor201810,026,479Content addressable memory device having electrically floating body transistor201810,008,266Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating20189,978,450Memory cells, memory cell arrays, methods of using and methods of making20189,960,166Method of operating semiconductor memory device with floating body transisor using silicon controlled rectifier principle20189,947,387Systems and methods for reducing standby power in floating body memory devices20189,928,910'Semiconductor memory having volatile and multi-bit non-volatile functionality and method of operating'20189,922,711'Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating'20189,922,981'Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making'20189,905,564'Memory cell comprising first and second transistors and methods of operating'20189,893,067'Memory device having electrically floating body transistor'20189,892,790'Method of programming a continuous-channel flash memory device'20189,881,667'Memory device comprising an electrically floating body transistor'20189,865,332'Scalable floating body memory cell for memory compilers and method of using floating body memories with memory compilers'20189,847,131Memory cells, memory cell arrays, methods of using and methods of making20179,831,247Memory device comprising electrically floating body transistor20179,812,456'Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor'20179,812,203'Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating'20179,799,392'Memory device comprising electrically floating body transistor'20179,799,761'3DIC based system with memory cells and transistors'20179,793,277'Method of maintaining the state of semiconductor memory having electrically floating body transistor'20179,761,589'Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle'20179,761,311'Semiconductor memory having both volatile and non-volatile functionality'20179,747,983'Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating'20179,715,932'Memory cells, memory cell arrays, methods of using and methods of making'20179,704,869'Semiconductor memory device having an electrically floating body transistor'20179,704,578'NAND string utilizing floating body memory cell'20179,704,870'Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making'20179,679,648'Memory cells, memory cell arrays, methods of using and methods of making'20179,666,275'Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating'20179,653,467'Method of maintaining the state of semiconductor memory having electrically floating body transistor'20179,646,693'Semiconductor memory having volatile and multi-bit non-volatile functionality and method of operating'20179,614,080'Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating'20179,601,493'Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making'20179,589,963'Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor'20179,576,962'Memory device having electrically floating body transistor'20179,548,119'Memory device comprising an electrically floating body transistor'20179,536,595'Systems and methods for reducing standby power in floating body memory devices'20179,524,970'Asymmetric semiconductor memory device having electrically floating body transistor'20169,514,803'Semiconductor memory having electrically floating body transistor'20169,496,271'3DIC system with a two stable state memory and back-bias region'20169,496,053'Memory device comprising electrically floating body transistor'20169,490,012'Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating'20169,484,082'Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle'20169,460,790'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20169,455,262'Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating'20169,449,693'Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing'20169,450,090'Semiconductor memory device having an electrically floating body transistor'20169,431,401'Memory device comprising electrically floating body transistor'20169,401,206'Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating'20169,391,079'Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making'20169,368,625'NAND string utilizing floating body memory cell'20169,281,022'Systems and methods for reducing standby power in floating body memory devices'20169,275,723'Scalable floating body memory cell for memory compilers and method of using floating body memories with memory compilers'20169,257,179'Semiconductor memory having volatile and multi-bit non-volatile functionality and method of operating'20169,236,382'Method of maintaining the state of semiconductor memory having electrically floating body transistor'20169,230,965'Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle'20169,230,651'Memory device having electrically floating body transitor'20169,208,880'Content addressable memory device having electrically floating body transistor'20159,209,188'Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making'20159,208,840'Semiconductor memory device having an electrically floating body transistor'20159,153,309'Semiconductor memory device having electrically floating body transistor, semiconductor memory device having both volatile and non-volatile functionality and method or operating'20159,153,333'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20159,087,580'Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating'20159,029,922'Memory device comprising electrically floating body transistor'20159,030,872'Method of maintaining the state of semiconductor memory having electrically floating body transistor'20159,025,358'Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating'20159,001,581'Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making'20158,995,186'Memory cells, memory cell arrays, methods of using and methods of making'20158,957,458'Asymmetric semiconductor memory device having electrically floating body transistor'20158,937,834'Method of maintaining the state of semiconductor memory having electrically floating body transistor'20158,934,296'Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor'20158,923,052'Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating'20148,902,663'Method of maintaining a memory state'20148,837,247'Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle'20148,817,548'Semiconductor memory device having an electrically floating body transistor'20148,787,085'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20148,780,642'Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing'20148,767,458'Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor'20148,711,622'Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making'20148,654,583'Memory cells, memory cell arrays, methods of using and methods of making'20148,582,359'Dual-port semiconductor memory and first-in first-out (FIFO) memory having electrically floating body transistor'20138,570,803'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20138,559,257'Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle'20138,547,756'Semiconductor memory device having an electrically floating body transistor'20138,531,881'Memory cells, memory cell arrays, methods of using and methods of making'20138,514,623'Method of maintaining the state of semiconductor memory having electrically floating body transistor'20138,514,622'Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making'20138,472,249'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20138,391,066'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20138,379,458'Semiconductor device and structure'20138,294,193'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20128,264,876'Semiconductor memory device having an electrically floating body transistor'20128,264,875'Semiconductor memory device having an electrically floating body transistor'20128,243,499'Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating'20128,208,302'Method of maintaining the state of semiconductor memory having electrically floating body transistor'20128,194,451'Memory cells, memory cell arrays, methods of using and methods of making'20128,194,471'Semiconductor memory device having an electrically floating body transistor'20128,174,886'Semiconductor memory having electrically floating body transistor'20128,159,868'Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating'20128,159,878'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20128,130,547'Method of maintaining the state of semiconductor memory having electrically floating body transistor'20128,130,548'Semiconductor memory having electrically floating body transistor'20128,077,536'Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle'20118,059,459'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20118,036,033'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20118,014,200'Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating'20117,847,338'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20107,808,839'Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing'20107,800,159'Array of contactless non-volatile memory cells'20107,760,548'Semiconductor memory having both volatile and non-volatile functionality and method of operating'20107,544,569'Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing'20097,470,949'Bidirectional nonvolatile memory cell having charge trapping layer in trench and an array of such memory cells, and method of manufacturing'20087,263,005'Method of programming a non-volatile memory cell by controlling the channel current during the rise period'20077,247,907'Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing'20077,242,051'Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing'20077,102,930'Method of programming a non-volatile memory cell to eliminate or to minimize program deceleration'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2018Patents assigned to SILICON STORAGE TECH INC (11)· patent assignee history
2006–2021Based in San Jose, CA, US· patent location history
2010–2020Patents assigned to WIDJAJA YUNIARTO (42)· patent assignee history
2011–2021Patents assigned to ZENO SEMICONDUCTOR INC (171)· patent assignee history
2012–2015Patents assigned to OR-BACH ZVI (11)· patent assignee history
2013–2019Patents assigned to MONOLITHIC 3D INC (5)· patent assignee history
2016–2021Based in Cupertino, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ZENO SEMICONDUCTOR INC1712011–2021
WIDJAJA YUNIARTOself422010–2020
OR-BACH ZVI112012–2015
SILICON STORAGE TECH INC112006–2018
MONOLITHIC 3D INC52013–2019
Locations
LocationPatentsSpan
San Jose, California, US1192006–2021
Cupertino, California, US732016–2021