Inventor
Jifeng Zhu
Inventor
Hubei, CN
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H10BElectronic memory devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10DInorganic electric semiconductor devices7%
G11CStatic stores1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
H10NElectric solid-state devices not otherwise provided for1%
PatentTitleYear
10,867,678Three-dimensional memory devices202010,847,528Memory cell structure of a three-dimensional memory device202010,840,125Memory structure and method for forming the same202010,833,042Hybrid bonding using dummy bonding contacts202010,804,287Three-dimensional memory devices and fabricating methods thereof202010,796,993Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202010,784,225Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same202010,763,158Method for forming lead wires in hybrid-bonded semiconductor devices202010,748,851Hybrid bonding using dummy bonding contacts and dummy interconnects202010,680,003Staircase structure for memory device202010,679,941Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202010,672,711Word line contact structure for three-dimensional memory devices and fabrication methods thereof202010,651,087Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202010,644,015Memory cell structure of a three-dimensional memory device202010,607,887Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202010,580,788Methods for forming three-dimensional memory devices202010,515,975Method for forming dual-deck channel hole structure of three-dimensional memory device201910,497,708Memory structure and forming method thereof201910,283,452Three-dimensional memory devices having a plurality of NAND strings20199,589,937'Semiconductor cooling method and method of heat dissipation'20179,455,297'Preparation process of image sensors'20169,455,221'Preparation method of three-dimensional integrated inductor-capacitor structure'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2017Patents assigned to WUHAN XINXIN SEMICONDUCTOR MFG (3)· patent assignee history
2016–2020Based in Hubei, CN· patent location history
2019–2020Patents assigned to YANGTZE MEMORY TECH CO LTD (18)· patent assignee history
2019–2020Based in Wuhan, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 18 | 2019–2020 |
| WUHAN XINXIN SEMICONDUCTOR MFG | 3 | 2016–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hubei, CN | 15 | 2016–2020 |
| Wuhan, CN | 7 | 2019–2020 |