Inventor
Chih-Tang Peng
Inventor
Zhubei City, TW
Overview
Patents· 52 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H01LSemiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
B82YSpecific uses or applications of nanostructures5%
H10BElectronic memory devices1%
B81BMicrostructural devices or systems, e.g. micromechanical devices1%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure1%
PatentTitleYear
11,094,545Self-aligned insulated film for high-K metal gate device202110,840,154Method for forming semiconductor structure with high aspect ratio202010,727,064Post UV cure for gapfill improvement202010,707,114Method of forming isolation layer202010,643,902Semiconductor device and method for atomic layer deposition of a dielectric over a substrate202010,483,169FinFET cut-last process using oxide trench fill201910,468,409FinFET device with oxidation-resist STI liner structure201910,418,271Method of forming isolation layer201910,388,531Self-aligned insulated film for high-k metal gate device201910,361,113Formation and in-situ treatment processes for gap fill layers201910,354,923Semiconductor device and method for atomic layer deposition of a dielectric over a substrate201910,332,746Post UV cure for gapfill improvement201910,325,994Semiconductor device and method of forming vertical structure201910,269,937Semiconductor strips with undercuts and methods for forming the same201910,103,141Fin deformation modulation20189,954,069Semiconductor device and method of forming vertical structure20189,941,394Tunnel field-effect transistor20189,865,708'Semiconductor strips with undercuts and methods for forming the same'20189,853,102Tunnel field-effect transistor20179,779,947'Self-aligned insulated film for high-k metal gate device'20179,779,980'Uniform shallow trench isolation regions and the method of forming the same'20179,704,974'Process of manufacturing Fin-FET device'20179,685,344'Method of fabricating a semiconductor device including a plurality of isolation features'20179,647,066'Dummy FinFET structure and method of making same'20179,564,488'Strained isolation regions'20179,520,296'Semiconductor device having a low divot of alignment between a substrate and an isolation thereof and method of forming the same'20169,478,631'Vertical-gate-all-around devices and method of fabrication thereof'20169,460,956'Method of forming shallow trench isolation and semiconductor device'20169,443,961'Semiconductor strips with undercuts and methods for forming the same'20169,318,447'Semiconductor device and method of forming vertical structure'20169,287,129'Method of fabricating FinFETs'20169,276,062'Fin deformation modulation'20169,252,224'Self-aligned insulated film for high-k metal gate device'20169,177,955'Isolation region gap fill method'20159,142,402'Uniform shallow trench isolation regions and the method of forming the same'20158,895,446'Fin deformation modulation'20148,828,841'Semiconductor device and method of manufacture'20148,822,283'Self-aligned insulated film for high-k metal gate device'20148,748,989'Fin field effect transistors'20148,736,016'Strained isolation regions'20148,735,252'Method of semiconductor integrated circuit fabrication'20148,658,539'Fin profile structure and method of making same'20148,629,508'Semiconductor device and method of manufacture'20148,580,653'Method for fabricating an isolation structure'20138,546,891'Fin profile structure and method of making same'20138,508,000'Fin profile structure and method of making same'20138,461,654'Spacer shape engineering for void-free gap-filling process'20138,404,561'Method for fabricating an isolation structure'20138,329,552'Semiconductor device and method of manufacture'20128,048,752'Spacer shape engineering for void-free gap-filling process'20117,592,710'Bond pad structure for wire bonding'20096,541,834'Silicon pressure micro-sensing device and the fabrication process'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003Based in Hsin Chu, TW· patent location history
2009–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (21)· patent assignee history
2009–2017Based in Taipei, TW· patent location history
2012–2017Patents assigned to PENG CHIH-TANG (11)· patent assignee history
2012–2017Patents assigned to LIEN HAO-MING (7)· patent assignee history
2012–2017Patents assigned to LEE TZE-LIANG (6)· patent assignee history
2014–2020Based in Zhubei City, TW· patent location history
2016–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (29)· patent assignee history
2016–2020Based in Hsinchu County, TW· patent location history
2021Based in Zhubei, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 29 | 2016–2021 |
| TAIWAN SEMICONDUCTOR MFG | 21 | 2009–2016 |
| PENG CHIH-TANGself | 11 | 2012–2017 |
| LIEN HAO-MING | 7 | 2012–2017 |
| LEE TZE-LIANG | 6 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Zhubei City, TW | 24 | 2014–2020 |
| Taipei, TW | 17 | 2009–2017 |
| Hsinchu County, TW | 9 | 2016–2020 |
| Zhubei, TW | 1 | 2021 |
| Hsin Chu, TW | 1 | 2003 |