Inventor

Chung-Yen Chou

Inventor
Hsinchu, TW

Overview

63→
Patents
2006–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 63 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10BElectronic memory devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems6%
B81BMicrostructural devices or systems, e.g. micromechanical devices5%
H10NElectric solid-state devices not otherwise provided for5%
H01FMagnets3%
G11CStatic stores2%
PatentTitleYear
10,741,488Semiconductor device with integrated capacitor and manufacturing method thereof202010,683,204Semiconductor arrangement and formation thereof202010,622,471Manufacturing method of semiconductor structure202010,614,948Method for forming inductor structure with magnetic material202010,522,532Through via extending through a group III-V layer201910,508,021Microelectromechanical systems (MEMS) structure to prevent stiction after a wet cleaning process201910,509,169Semiconductor structure and manufacturing method of the same201910,468,587Semiconductor structure, electrode structure and method of forming the same201910,325,910Semiconductor device containing HEMT and MISFET and method of forming the same201910,322,930Semiconductor arrangement and formation thereof201910,269,637Semiconductor structure and fabricating method thereof201910,164,183Semiconductor device and manufacturing method thereof201810,158,073Manufacturing method of semiconductor structure201810,157,820Methods for manufacturing a thin film resistor over interconnect pads201810,157,706Inductor structure with magnetic material201810,138,118Structure to reduce backside silicon damage201810,141,438Semiconductor structure and manufacturing method thereof201810,115,784Semiconductor device, MIM capacitor and associated fabricating method201810,049,890Semiconductor structure and method of manufacturing the same20189,975,757Wafer Level Hermetic Seal Process for microelectromechanical systems (MEMS) devices20189,960,285Contact structure20189,944,516High aspect ratio etch without upper widening20189,911,734'Semiconductor device containing HEMT and MISFET and method of forming the same'20189,876,169RRAM devices and methods20189,865,389'Inductor structure with magnetic material'20189,853,091Side bottom contact RRAM structure20179,825,224'RRAM device'20179,796,584'Method for fabricating a micro-well of a biosensor'20179,771,256'Micro electro mechanical system (MEMS) device having via extending through plug'20179,748,373'MISFET device'20179,738,516'Structure to reduce backside silicon damage'20179,714,914'CMOS compatible biofet'20179,711,713'Semiconductor structure, electrode structure and method of forming the same'20179,676,606'Microelectromechanical systems (MEMS) structure to prevent stiction after a wet cleaning process'20179,653,682'Resistive random access memory structure'20179,637,378'Cup-like getter scheme'20179,627,467'Thin film resistor integrated between interconnect levels and contacting an underlying dielectric layer protrusion'20179,614,025'Method of fabricating semiconductor device'20179,606,081'Method for fabricating a micro-well of a biosensor'20179,595,521'Capacitive device'20179,570,536'Method for forming an inductor structure with magnetic material'20179,530,685'Isolation trench through backside of substrate'20169,434,076'Robot blade design'20169,431,603'RRAM device'20169,418,901'Semiconductor device containing HEMT and MISFET and method of forming the same'20169,362,271'Capacitive device'20169,269,760'Method of fabricating semiconductor device'20169,263,569'MISFET device and method of forming the same'20169,224,615'Noble gas bombardment to reduce scallops in bosch etching'20159,219,109'Inductor structure with magnetic material'20159,159,723'Method for manufacturing semiconductor device and semiconductor device'20159,142,614'Isolation trench through backside of substrate'20159,105,759'Capacitive device and method of making the same'20159,048,128'Inductor structure with magnetic material'20158,969,171'Method of making deep trench, and devices formed by the method'20158,969,937'Semiconductor device'20158,928,120'Wafer edge protection structure'20158,912,573'Semiconductor device containing HEMT and MISFET and method of forming the same'20148,759,193'Method of fabricating semiconductor device'20148,643,074'Semiconductor device'20148,501,566'Method for fabricating a recessed channel access transistor device'20137,666,792'Method for fabricating a deep trench in a substrate'20107,025,858'Apparatus for supporting wafer in semiconductor process'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2014Patents assigned to CHOU CHUNG-YEN (3)· patent assignee history
2006Based in Science-Based Industrial Park, Hsin-Chu, TW· patent location history
2010–2013Patents assigned to NANYA TECHNOLOGY CORP (2)· patent assignee history
2010Based in Taipei, TW· patent location history
2013–2016Based in New Taipei, TW· patent location history
2014–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (10)· patent assignee history
2014Patents assigned to CHIANG WEN-CHUAN (1)· patent assignee history
2014–2020Based in Hsinchu, TW· patent location history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (50)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD502015–2020
TAIWAN SEMICONDUCTOR MFG102014–2016
CHOU CHUNG-YENself32006–2014
NANYA TECHNOLOGY CORP22010–2013
CHIANG WEN-CHUAN12014
Locations
LocationPatentsSpan
Hsinchu, TW562014–2020
New Taipei, TW52013–2016
Taipei, TW12010
Science-Based Industrial Park, Hsin-Chu, TW12006