Inventor

Hyung-Bok Choi

Inventor
Ichon-shi, KR

Overview

23→
Patents
2000–2010
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10BElectronic memory devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
A01GHorticulture2%
B23CMilling2%
E02DFoundations2%
PatentTitleYear
7,858,483'Method for fabricating capacitor of semiconductor device'20107,820,507'Semiconductor device and method for fabricating the same'20107,666,738'Method for fabricating capacitor of semiconductor device'20107,595,526'Capacitor and method for fabricating the same'20097,547,598'Method for fabricating capacitor in semiconductor device'20097,407,854'Method for fabricating capacitor of semiconductor device'20087,339,211'Semiconductor device and method for fabricating the same'20087,285,485'Method for forming a gate in a semiconductor, which prevents gate leaning caused by thermal processing'20077,259,057'Method for forming capacitor of semiconductor device'20077,115,468'Semiconductor device and method for fabricating the same'20066,946,356'Capacitor and method for fabricating the same'20056,917,114'Semiconductor device and method of fabricating the same'20056,818,497'Method for fabricating capacitor using electrochemical deposition'20046,734,061'Semiconductor memory device having a plug contacted to a capacitor electrode and method for fabricating the capacitor'20046,699,769'Method for fabricating capacitor using electrochemical deposition and wet etching'20046,664,195'Method for forming damascene metal gate'20036,500,708'Method for forming capacitor of semiconductor device'20026,451,666'Method for forming a lower electrode by using an electroplating method'20026,444,479'Method for forming capacitor of semiconductor device'20026,417,042'Method of manufacturing a capacitor in a semiconductor device'20026,383,865'Method for fabricating a capacitor in a semiconductor device'20026,277,738'Method of manufacturing a semiconductor device capable of reducing contact resistance'20016,114,241'Method of manufacturing a semiconductor device capable of reducing contact resistance'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2002Patents assigned to HYUNDAI ELECTRONICS IND (4)· patent assignee history
2000–2010Based in Ichon-shi, KR· patent location history
2002–2010Patents assigned to HYNIX SEMICONDUCTOR INC (19)· patent assignee history
2002–2010Based in Kyungki-do, KR· patent location history
2002Based in Kyonggi-do, KR· patent location history
2002Based in Kumi-shi, KR· patent location history
2010Based in Yongin-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HYNIX SEMICONDUCTOR INC192002–2010
HYUNDAI ELECTRONICS IND42000–2002
Locations
LocationPatentsSpan
Ichon-shi, KR112000–2010
Kyungki-do, KR82002–2010
Kyonggi-do, KR22002
Yongin-si, KR12010
Kumi-shi, KR12002