Inventor
Fumihide Ikeda
Inventor
Tokyo, JP
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1056%
C23CCoating metallic material25%
C30BSingle-crystal growth13%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
PatentTitleYear
6,864,463'Substrate processing apparatus and semiconductor device producing method'20056,462,411'Semiconductor wafer processing apparatus for transferring a wafer mount'20026,332,927'Substrate processing apparatus'20016,270,581'Wet-oxidation apparatus and wet-oxidation method'20016,217,663'Substrate processing apparatus and substrate processing method'20016,139,641'Substrate processing apparatus having a gas heating tube'20006,132,553'Substrate processing apparatus'20005,960,159'Heat treatment of semiconductor wafers where upper heater directly heats upper wafer in its entirety and lower heater directly heats lower wafer in its entirety'19995,705,224'Vapor depositing method'19985,387,265'Semiconductor wafer reaction furnace with wafer transfer means'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2002Patents assigned to KOKUSAI ELECTRIC CO LTD (9)· patent assignee history
1995–2005Based in Tokyo, JP· patent location history
1998Based in Toyama, JP· patent location history
2005Patents assigned to HITACHI INT ELECTRIC INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOKUSAI ELECTRIC CO LTD | 9 | 1995–2002 |
| HITACHI INT ELECTRIC INC | 1 | 2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 9 | 1995–2005 |
| Toyama, JP | 1 | 1998 |