Inventor
SHINTO ICHIKAWA
Inventor
JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for23%
G11BInformation storage based on relative movement between record carrier and transducer17%
G01RMeasuring electric variables14%
G11CStatic stores11%
H01FMagnets10%
H01LSemiconductor devices7%
H10BElectronic memory devices7%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner6%
B82YSpecific uses or applications of nanostructures4%
H03HImpedance networks, e.g. resonant circuits2%
PatentTitleYear
12,538,712Magnetoresistive effect element and crystallization method of ferromagnetic layer202612,507,598Magnetoresistance effect element with layers containing crystallized Co Heusler alloy202512,477,953Domain wall movement element, magnetoresistive element, and magnetic array202512,364,168Magnetoresistance effect element202512,288,576Magnetoresistance effect element, magnetic recording element, and high-frequency device202512,278,033Magnetoresistance effect element202512,274,184Magnetoresistance effect element202512,063,873Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer202412,035,635Magnetoresistance effect element202411,967,348Magnetoresistance effect element containing Heusler alloy with additive element202411,944,018Magnetoresistance effect element202411,927,649Magnetoresistance effect element202411,730,063Magnetoresistive effect element including a Heusler alloy layer with a crystal region and an amorphous region202311,728,082Magnetoresistive effect element202311,696,513Magnetoresistance effect element and method for manufacturing the same202311,621,392Magnetoresistance effect element including a crystallized co heusler alloy layer202311,594,674Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer202311,585,873Magnetoresistive effect element containing two non-magnetic layers with different crystal structures202311,525,873Magnetoresistance effect element including at least one Heusler alloy layer and at least one discontinuous non-magnetic layer202211,362,270Magnetoresistance effect element202211,158,785Magnetoresistance effect element including a crystallized Heusler alloy2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TDK CORP (21)· patent assignee history
2021–2026Based in JP· patent location history
2023Patents assigned to NAT INST MATERIALS SCIENCE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TDK CORP | 21 | 2021–2026 |
| NAT INST MATERIALS SCIENCE | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 21 | 2021–2026 |