Inventor
Sheng-Wei Tsaur
Inventor
Hsinchu, TW
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices50%
H10DInorganic electric semiconductor devices50%
PatentTitleYear
6,544,828'Adding a poly-strip on isolation\'s edge to improve endurance of high voltage NMOS on EEPROM'20036,468,863'Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereof'20026,387,757'Sacrificial self aligned spacer layer ion implant mask method for forming a split gate field effect transistor (FET) device'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2003Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history
2002–2003Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 3 | 2002–2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 3 | 2002–2003 |