Inventor

Chiou-Feng Chen

Inventor
Cupertino, CA, US

Overview

19→
Patents
2000–2010
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices43%
G11CStatic stores30%
H10DInorganic electric semiconductor devices27%
PatentTitleYear
7,718,488'Process of fabricating flash memory with enhanced program and erase coupling'20107,646,641'NAND flash memory with nitride charge storage gates and fabrication process'20107,501,321'NAND flash memory with densely packed memory gates and fabrication process'20097,217,621'Self-aligned split-gate NAND flash memory and fabrication process'20077,046,552'Flash memory with enhanced program and erase coupling and process of fabricating the same'20067,037,787'Flash memory with trench select gate and fabrication process'20066,992,929'Self-aligned split-gate NAND flash memory and fabrication process'20066,894,339'Flash memory with trench select gate and fabrication process'20056,885,586'Self-aligned split-gate NAND flash memory and fabrication process'20056,747,310'Flash memory cells with separated self-aligned select and erase gates, and process of fabrication'20046,590,253'Memory cell with self-aligned floating gate and separate select gate, and fabrication process'20036,503,785'Flash memory cell with contactless bit line, and process of fabrication'20036,426,896'Flash memory cell with contactless bit line, and process of fabrication'20026,313,498'Flash memory cell with thin floating gate with rounded side wall, and fabrication process'20016,291,297'Flash memory cell with self-aligned gates and fabrication process'20016,222,227'Memory cell with self-aligned floating gate and separate select gate, and fabrication process'20016,184,554'Memory cell with self-aligned floating gate and separate select gate, and fabrication process'20016,140,182'Nonvolatile memory with self-aligned floating gate and fabrication process'20006,091,104'Flash memory cell with self-aligned gates and fabrication process'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2005Patents assigned to ACTRANS SYSTEM INC (10)· patent assignee history
2000–2003Based in Cupertino, CA, US· patent location history
2004–2006Based in Hsinchu, TW· patent location history
2005–2006Patents assigned to ACTRANS SYSTEM INC USA (4)· patent assignee history
2006–2010Based in Santa Clara, CA, US· patent location history
2007–2010Patents assigned to SILICON STORAGE TECH INC (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ACTRANS SYSTEM INC102000–2005
ACTRANS SYSTEM INC USA42005–2006
SILICON STORAGE TECH INC42007–2010
Locations
LocationPatentsSpan
Cupertino, California, US92000–2003
Santa Clara, California, US62006–2010
Hsinchu, TW42004–2006