Inventor

Judy H. Huang

Inventor

Los Gatos, CA, US

Overview

1998–2015

Patent span

Electricity

Primary field (CPC H)

Patents· 53 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary

C23CCoating metallic material24%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

H10DInorganic electric semiconductor devices4%

H01JElectric discharge tubes or discharge lamps3%

B08BCleaning in general3%

C23GCleaning or de-greasing of metallic material by chemical methods other than electrolysis3%

C30BSingle-crystal growth3%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%

PatentTitleYear

9,034,143'Inductive/capacitive hybrid plasma source and system with such chamber'2015 8,809,161'Flowable film dielectric gap fill process'2014 8,677,929'Method and apparatus for masking solar cell substrates for deposition'2014 8,580,697'CVD flowable gap fill'2013 8,481,403'Flowable film dielectric gap fill process'2013 8,183,150'Semiconductor device having silicon carbide and conductive pathway interface'2012 7,915,139'CVD flowable gap fill'2011 7,888,233'Flowable film dielectric gap fill process'2011 7,727,906'H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift'2010 7,670,945'In situ deposition of a low Îº dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application'2010 7,582,555'CVD flowable gap fill'2009 7,524,735'Flowable film dielectric gap fill process'2009 7,482,245'Stress profile modulation in STI gap fill'2009 7,476,621'Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill'2009 7,470,611'In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application'2008 7,344,996'Helium-based etch process in deposition-etch-deposition gap fill'2008 7,227,244'Integrated low k dielectrics and etch stops'2007 7,211,525'Hydrogen treatment enhanced gap fill'2007 7,144,606'Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers'2006 7,070,657'Method and apparatus for depositing antireflective coating'2006 6,974,766'In situ deposition of a low Îº dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application'2005 6,951,826'Silicon carbide deposition for use as a low dielectric constant anti-reflective coating'2005 6,946,401'Plasma treatment for copper oxide reduction'2005 6,858,153'Integrated low K dielectrics and etch stops'2005 6,827,982'Binder-enriched silicalite adhesion layer and apparatus for fabricating the same'2004 6,821,571'Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers'2004 6,794,311'Method and apparatus for treating low k dielectric layers to reduce diffusion'2004 6,777,349'Hermetic silicon carbide'2004 6,734,102'Plasma treatment for copper oxide reduction'2004 6,700,202'Semiconductor device having reduced oxidation interface'2004 6,669,858'Integrated low k dielectrics and etch stops'2003 6,635,583'Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating'2003 6,562,544'Method and apparatus for improving accuracy in photolithographic processing of substrates'2003 6,541,369'Method and apparatus for reducing fixed charges in a semiconductor device'2003 6,533,855'Dispersions of silicalite and zeolite nanoparticles in nonpolar solvents'2003 6,517,913'Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions'2003 6,451,686'Control of semiconductor device isolation properties through incorporation of fluorine in peteos films'2002 6,436,843'System and method for coating substrates using ink jet technology'2002 6,395,092'Apparatus for depositing high deposition rate halogen-doped silicon oxide layer'2002 6,358,573'Mixed frequency CVD process'2002 6,355,571'Method and apparatus for reducing copper oxidation and contamination in a semiconductor device'2002 6,340,435'Integrated low K dielectrics and etch stops'2002 6,324,439'Method and apparatus for applying films using reduced deposition rates'2001 6,209,484'Method and apparatus for depositing an etch stop layer'2001 6,187,072'Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions'2001 6,156,149'In situ deposition of a dielectric oxide layer and anti-reflective coating'2000 6,127,262'Method and apparatus for depositing an etch stop layer'2000 6,098,568'Mixed frequency CVD apparatus'2000 6,083,852'Method for applying films using reduced deposition rates'2000 6,077,764'Process for depositing high deposition rate halogen-doped silicon oxide layer'2000 5,968,324'Method and apparatus for depositing antireflective coating'1999 5,908,672'Method and apparatus for depositing a planarized passivation layer'1999 5,792,269'Gas distribution for CVD systems'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2012Patents assigned to APPLIED MATERIALS INC (35)· patent assignee history

1998–2015Based in Los Gatos, CA, US· patent location history

2001Based in Los Angeles, CA, US· patent location history

2002–2014Patents assigned to NOVELLUS SYSTEMS INC (16)· patent assignee history

2012–2013Patents assigned to HUANG JUDY H (3)· patent assignee history

2013Patents assigned to BARNES MICHAEL (2)· patent assignee history

2014–2015Patents assigned to INTEVAC INC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
APPLIED MATERIALS INC	35	1998–2012
NOVELLUS SYSTEMS INC	16	2002–2014
HUANG JUDY Hself	3	2012–2013
BARNES MICHAEL	2	2013
INTEVAC INC	2	2014–2015

Locations

Location	Patents	Span
Los Gatos, California, US	52	1998–2015
Los Angeles, California, US	1	2001