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Inventor

Katsushi Akita

Inventor
Itami, JP

Overview

91→
Patents
2001–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 91 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary
B82YSpecific uses or applications of nanostructures16%
H10HInorganic light-emitting semiconductor devices having potential barriers16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light12%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
H01LSemiconductor devices8%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
H10DInorganic electric semiconductor devices5%
Y02PClimate change mitigation technologies in the production or processing of goods4%
C30BSingle-crystal growth3%
PatentTitleYear
10,822,722Gallium arsenide crystal body and gallium arsenide crystal substrate202010,714,640Semiconductor stacked body, light-receiving element, and method for producing semiconductor stacked body202010,326,034Semiconductor laminate and light-receiving element201910,158,035Semiconductor stack, light-receiving device, and method for producing semiconductor stack20189,929,301'Semiconductor stack and semiconductor device'20189,887,310'Semiconductor layered structure, method for producing semiconductor layered structure, and method for producing semiconductor device'20189,818,895'Semiconductor device, optical sensor device and semiconductor device manufacturing method'20179,773,932'Epitaxial wafer and method for manufacturing same'20179,698,287'Epitaxial wafer, method for producing the same, semiconductor element, and optical sensor device'20179,680,040'Semiconductor device and method for manufacturing the same'20179,608,148'Semiconductor element and method for producing the same'20179,281,427'Semiconductor device'20169,190,544'Photodiode, optical sensor device, and photodiode manufacturing method'20159,171,978'Epitaxial wafer, method for producing the same, photodiode, and optical sensor device'20159,159,853'Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer'20159,129,808'Epitaxial wafer, photodiode, optical sensor device, and methods for producing epitaxial wafer and photodiode'20159,123,843'Semiconductor device'20159,040,955'Semiconductor device, optical sensor device and semiconductor device manufacturing method'20158,927,962'Group III nitride semiconductor optical device'20158,921,829'Light receiving element, light receiving element array, hybrid-type detecting device, optical sensor device, and method for producing light receiving element array'20148,917,750'III-nitride semiconductor laser diode'20148,866,199'Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer'20148,822,977'Photodetector and method of manufacturing the photodetector'20148,803,274'Nitride-based semiconductor light-emitting element'20148,748,868'Nitride semiconductor light emitting device and epitaxial substrate'20148,693,515'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,679,955'Method for forming epitaxial wafer and method for fabricating semiconductor device'20148,653,561'III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device'20148,653,621'Nitride-based semiconductor light-emitting element'20148,642,943'Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer'20148,633,514'Group III nitride semiconductor wafer and group III nitride semiconductor device'20148,619,828'Group III nitride semiconductor laser diode'20138,592,289'Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer'20138,548,021'III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser'20138,546,163'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,513,684'Nitride semiconductor light emitting device'20138,487,327'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20138,483,251'Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode'20138,476,615'GaN-based semiconductor light emitting device and the method for making the same'20138,461,570'Semiconductor device and manufacturing method thereof'20138,420,426'Method of manufacturing a light-emitting device'20138,415,180'Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device'20138,405,066'Nitride-based semiconductor light-emitting device'20138,357,558'Method of making semiconductor light-emitting device'20138,357,946'Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device'20138,309,380'Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer'20128,304,269'Method of fabricating group III nitride semiconductor device'20128,306,082'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,304,793'III-nitride semiconductor optical device and epitaxial substrate'20128,284,811'Gallium nitride-based semiconductor laser diode'20128,227,277'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,228,963'Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer'20128,207,544'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20128,207,556'Group III nitride semiconductor device and epitaxial substrate'20128,198,623'Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer'20128,183,071'Method for producing nitride semiconductor optical device and epitaxial wafer'20128,148,751'Group III nitride semiconductor wafer and group III nitride semiconductor device'20128,143,140'Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same'20128,071,986'Nitride semiconductor light-emitting element'20118,067,257'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20118,053,806'Group III nitride semiconductor device and epitaxial substrate'20118,048,702'Method of fabricating nitride-based semiconductor optical device'20117,973,322'Nitride semiconductor light emitting device and method for forming the same'20117,968,864'Group-III nitride light-emitting device'20117,955,881'Method of fabricating quantum well structure'20117,949,026'Group III nitride semiconductor laser'20117,943,943'Light-emitting device and manufacturing method thereof'20117,939,354'Method of fabricating nitride semiconductor laser'20117,933,303'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20117,915,635'Semiconductor light-emitting element and substrate used in formation of the same'20117,884,351'Nitride semiconductor light-emitting device'20117,858,963'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,859,007'Light-emitting device and manufacturing method thereof'20107,851,243'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,851,821'Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device'20107,816,238'GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate'20107,728,348'Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same'20107,687,822'Light emitting apparatus'20107,550,776'Light generating semiconductor device and method of making the same'20097,547,910'Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device'20097,508,011'Semiconductor light generating device'20097,387,678'GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same'20087,368,310'Light generating semiconductor device and method of making the same'20087,351,347'Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate'20087,294,867'Semiconductor light generating device'20077,202,509'Light emitting apparatus'20077,195,937'Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer'20077,190,004'Light emitting device'20076,998,284'Semiconductor device having quantum well structure, and method of forming the same'20066,387,722'Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate'20026,270,587'Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (90)· patent assignee history
2001–2002Based in Hyogo, JP· patent location history
2006–2020Based in Itami, JP· patent location history
2011–2015Patents assigned to AKITA KATSUSHI (44)· patent assignee history
2011–2015Patents assigned to ENYA YOHEI (25)· patent assignee history
2011–2015Patents assigned to KYONO TAKASHI (25)· patent assignee history
2011–2015Patents assigned to UENO MASAKI (25)· patent assignee history
2020Based in Osaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES902001–2020
AKITA KATSUSHIself442011–2015
ENYA YOHEI252011–2015
KYONO TAKASHI252011–2015
UENO MASAKI252011–2015
Locations
LocationPatentsSpan
Itami, JP882006–2020
Hyogo, JP22001–2002
Osaka, JP12020