Inventor
Mei Chang
Inventor
Saratoga, CA, US
Overview
Patents· 172 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
C23CCoating metallic material23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H01JElectric discharge tubes or discharge lamps8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H10DInorganic electric semiconductor devices7%
H01LSemiconductor devices4%
Y10TTechnical subjects covered by former us classification4%
B01DSeparation1%
H10BElectronic memory devices1%
PatentTitleYear
11,094,387Multi-fuse memory cell circuit and method202111,094,701Layout structure of storage cell and method thereof202110,879,090High temperature process chamber lid202010,784,157Doped tantalum nitride for copper barrier applications202010,752,990Apparatus and methods to remove residual precursor inside gas lines post-deposition202010,559,578Deposition of cobalt films with high deposition rate202010,483,116Methods of depositing metal films using metal oxyhalide precursors2019RE047440Apparatus and method for providing uniform flow of gas20199,831,109High temperature process chamber lid20179,773,663'Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD'20179,765,432'Dual-direction chemical delivery system for ALD/CVD chambers'20179,683,287'Deposition of films comprising aluminum alloys with high aluminum content'20179,441,298'Devices including metal-silicon contacts using indium arsenide films and apparatus and methods'20169,353,440'Dual-direction chemical delivery system for ALD/CVD chambers'20169,305,805'Methods for atomic layer etching'20169,269,584'N-metal film deposition with initiation layer'20169,252,024'Deposition chambers with UV treatment and methods of use'20169,230,815'Methods for depositing fluorine/carbon-free conformal tungsten'20169,190,320'Devices including metal-silicon contacts using indium arsenide films and apparatus and methods'20159,145,612'Deposition of N-metal films comprising aluminum alloys'20159,109,754'Apparatus and method for providing uniform flow of gas'20159,111,876'Methods for atomic layer etching'20159,076,661'Methods for manganese nitride integration'20159,004,006'Process chamber lid design with built-in plasma source for short lifetime species'20158,980,761'Directional SIO2 etch using low-temperature etchant deposition and plasma post-treatment'20158,955,547'Apparatus and method for providing uniform flow of gas'20158,927,059'Deposition of metal films using alane-based precursors'20158,895,443'N-metal film deposition with initiation layer'20148,846,163'Method for removing oxides'20148,815,724'Process for forming cobalt-containing materials'20148,747,686'Methods of end point detection for substrate fabrication processes'20148,721,796'Plasma cleaning apparatus and method'20148,642,473'Methods for contact clean'20148,633,115'Methods for atomic layer etching'20148,592,305'Doping aluminum in tantalum silicide'20138,563,424'Process for forming cobalt and cobalt silicide materials in tungsten contact applications'20138,491,967'In-situ chamber treatment and deposition process'20138,324,095'Integration of ALD tantalum nitride for copper metallization'20128,318,605'Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere'20128,268,684'Method and apparatus for trench and via profile modification'20128,252,696'Selective etching of silicon nitride'20128,187,970'Process for forming cobalt and cobalt silicide materials in tungsten contact applications'20128,110,489'Process for forming cobalt-containing materials'20128,070,879'Apparatus and method for hybrid chemical processing'20118,062,422'Method and apparatus for generating a precursor for a semiconductor processing system'20118,043,933'Integration sequences with top surface profile modification'20117,994,002'Method and apparatus for trench and via profile modification'20117,977,246'Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere'20117,939,422'Methods of thin film process'20117,923,069'Multi-station deposition apparatus and method'20117,910,853'Direct real-time monitoring and feedback control of RF plasma output for wafer processing'20117,910,165'Ruthenium layer formation for copper film deposition'20117,871,926'Methods and systems for forming at least one dielectric layer'20117,867,789'Contact clean by remote plasma and repair of silicide surface'20117,846,824'Methods for forming a titanium nitride layer'20107,838,441'Deposition and densification process for titanium nitride barrier layers'20107,794,789'Multi-station deposition apparatus and method'20107,780,785'Gas delivery apparatus for atomic layer deposition'20107,780,793'Passivation layer formation by plasma clean process to reduce native oxide growth'20107,699,023'Gas delivery apparatus for atomic layer deposition'20107,691,442'Ruthenium or cobalt as an underlayer for tungsten film deposition'20107,605,083'Formation of composite tungsten films'20097,597,758'Chemical precursor ampoule for vapor deposition processes'20097,591,907'Apparatus for hybrid chemical processing'20097,588,736'Apparatus and method for generating a chemical precursor'20097,550,381'Contact clean by remote plasma and repair of silicide surface'20097,547,465'Multi-station deposition apparatus and method'20097,524,374'Method and apparatus for generating a precursor for a semiconductor processing system'20097,520,957'Lid assembly for front end of line fabrication'20097,521,379'Deposition and densification process for titanium nitride barrier layers'20097,507,660'Deposition processes for tungsten-containing barrier layers'20097,494,908'Apparatus for integration of barrier layer and seed layer'20097,429,402'Ruthenium as an underlayer for tungsten film deposition'20087,404,985'Noble metal layer formation for copper film deposition'20087,402,210'Apparatus and method for hybrid chemical processing'20087,396,480'Method for front end of line fabrication'20087,384,867'Formation of composite tungsten films'20087,352,048'Integration of barrier layer and seed layer'20087,270,709'Method and apparatus of generating PDMAT precursor'20077,264,846'Ruthenium layer formation for copper film deposition'20077,262,133'Enhancement of copper line reliability using thin ALD tan film to cap the copper line'20077,204,886'Apparatus and method for hybrid chemical processing'20077,049,226'Integration of ALD tantalum nitride for copper metallization'20067,026,238'Reliability barrier integration for Cu application'20066,939,804'Formation of composite tungsten films'20056,936,906'Integration of barrier layer and seed layer'20056,933,021'Method of TiSiN deposition using a chemical vapor deposition (CVD) process'20056,932,871'Multi-station deposition apparatus and method'20056,908,865'Method and apparatus for cleaning substrates'20056,905,541'Method and apparatus of generating PDMAT precursor'20056,849,545'System and method to form a composite film stack utilizing sequential deposition techniques'20056,821,891'Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors'20046,705,246'RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition'20046,699,530'Method for constructing a film on a semiconductor wafer'20046,607,976'Copper interconnect barrier layer structure and formation method'20036,555,183'Plasma treatment of a titanium nitride film formed by chemical vapor deposition'20036,548,402'Method of depositing a thick titanium nitride film'20036,533,894'RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition'20036,482,746'Computer readable medium for controlling a method of cleaning a process chamber'20026,432,479'Method for in-situ, post deposition surface passivation of a chemical vapor deposited film'20026,402,806'Method for unreacted precursor conversion and effluent removal'20026,395,128'RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition'20026,365,495'Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature'20026,355,106'Deposition of copper with increased adhesion'20026,326,690'Method of titanium/titanium nitride integration'20016,319,728'Method for treating a deposited film for resistivity reduction'20016,309,713'Deposition of tungsten nitride by plasma enhanced chemical vapor deposition'20016,296,712'Chemical vapor deposition hardware and process'20016,297,152'CVD process for DCS-based tungsten silicide'20016,294,466'HDP-CVD apparatus and process for depositing titanium films for semiconductor devices'20016,291,343'Plasma annealing of substrates to improve adhesion'20016,270,859'Plasma treatment of titanium nitride formed by chemical vapor deposition'20016,270,621'Etch chamber'20016,242,347'Method for cleaning a process chamber'20016,235,646'RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition'20016,214,714'Method of titanium/titanium nitride integration'20016,193,813'Utilization of SiH4 soak and purge in deposition processes'20016,193,836'Center gas feed apparatus for a high density plasma reactor'20016,179,925'Method and apparatus for improved control of process and purge material in substrate processing system'20016,171,661'Deposition of copper with increased adhesion'20016,159,867'RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition'20006,155,198'Apparatus for constructing an oxidized film on a semiconductor wafer'20006,129,044'Apparatus for substrate processing with improved throughput and yield'20006,123,864'Etch chamber'20006,106,625'Reactor useful for chemical vapor deposition of titanium nitride'20006,103,014'Chemical vapor deposition chamber'20006,099,649'Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal'20006,090,706'Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein'20006,079,356'Reactor optimized for chemical vapor deposition of titanium'20006,066,836'High temperature resistive heater for a process chamber'20006,063,441'Processing chamber and method for confining plasma'20006,040,022'PECVD of compounds of silicon from silane and nitrogen'20006,027,606'Center gas feed apparatus for a high density plasma reactor'20006,020,270'Bomine and iodine etch process for silicon and silicides'20005,989,999'Construction of a tantalum nitride film on a semiconductor wafer'19995,983,906'Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment'19995,964,947'Removable pumping channel liners within a chemical vapor deposition chamber'19995,935,338'Chemical vapor deposition chamber'19995,882,419'Chemical vapor deposition chamber'19995,874,362'Bromine and iodine etch process for silicon and silicides'19995,856,240'Chemical vapor deposition of a thin film onto a substrate'19995,855,687'Substrate support shield in wafer processing reactors'19995,851,299'Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions'19985,846,332'Thermally floating pedestal collar in a chemical vapor deposition chamber'19985,834,068'Wafer surface temperature control for deposition of thin films'19985,817,576'Utilization of SiH.sub.4 soak and purge in deposition processes'19985,780,360'Purge in silicide deposition processes dichlorosilane'19985,773,100'PECVD of silicon nitride films'19985,712,327'Soft gas permeable contact lens having improved clinical performance'19985,695,568'Chemical vapor deposition chamber'19975,565,382'Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas'19965,516,367'Chemical vapor deposition chamber with a purge guide'19965,510,297'Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor'19965,482,749'Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein'19965,449,410'Plasma processing apparatus'19955,421,401'Compound clamp ring for semiconductor wafers'19955,356,835'Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer'19945,326,725'Clamping ring and susceptor therefor'19945,316,278'Clamping ring apparatus for processing semiconductor wafers'19945,250,467'Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer'19935,219,485'Materials and methods for etching silicides, polycrystalline silicon and polycides'19935,215,619'Magnetic field-enhanced plasma etch reactor'19935,213,650'Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer'19935,207,836'Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus'19935,201,990'Process for treating aluminum surfaces in a vacuum apparatus'19935,075,256'Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer'19915,043,299'Process for selective deposition of tungsten on semiconductor wafer'19915,028,565'Process for CVD deposition of tungsten layer on semiconductor wafer'19914,962,049'Process for the plasma treatment of the backside of a semiconductor wafer'19904,960,488'Reactor chamber self-cleaning process'19904,854,263'Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films'19894,842,683'Magnetic field-enhanced plasma etch reactor'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–2020Patents assigned to APPLIED MATERIALS INC (169)· patent assignee history
1989–2001Based in Cupertino, CA, US· patent location history
1989–2000Based in San Jose, CA, US· patent location history
1998–2020Based in Saratoga, CA, US· patent location history
2008–2014Based in Saragoga, CA, US· patent location history
2011–2016Patents assigned to CHANG MEI (20)· patent assignee history
2011–2016Patents assigned to GANGULI SESHADRI (8)· patent assignee history
2012–2016Patents assigned to LU XINLIANG (7)· patent assignee history
2012–2015Patents assigned to KAO CHIEN-TEH (5)· patent assignee history
2021Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 169 | 1989–2020 |
| CHANG MEIself | 20 | 2011–2016 |
| GANGULI SESHADRI | 8 | 2011–2016 |
| LU XINLIANG | 7 | 2012–2016 |
| KAO CHIEN-TEH | 5 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saratoga, California, US | 130 | 1998–2020 |
| Cupertino, California, US | 30 | 1989–2001 |
| San Jose, California, US | 5 | 1989–2000 |
| Saragoga, California, US | 3 | 2008–2014 |
| Hsinchu, TW | 1 | 2021 |