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Inventor

Matthias Passlack

Inventor
Huldenberg, BE

Overview

74→
Patents
1995–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 74 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H01LSemiconductor devices18%
B82YSpecific uses or applications of nanostructures8%
C23CCoating metallic material5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
C30BSingle-crystal growth2%
H10BElectronic memory devices1%
H10KOrganic electric solid-state devices1%
PatentTitleYear
11,088,246Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor202110,991,576Crystalline semiconductor layer formed in BEOL processes202110,937,908Thin-sheet FinFET device202110,923,659Wafers for use in aligning nanotubes and methods of making and using the same202110,923,581Method for forming semiconductor structure202110,872,772Semiconductor arrangement and method of manufacture202010,872,972Vertical tunnel field effect transistor (FET)202010,868,154Semiconductor device and manufacturing method thereof202010,797,148III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof202010,727,427Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor202010,680,062III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereof202010,672,899Tunnel field-effect transistor with reduced trap-assisted tunneling leakage202010,636,878Steep sloped vertical tunnel field-effect transistor202010,516,039Semiconductor device and manufacturing method thereof201910,510,533Nanowire fabrication method and structure thereof201910,505,025Tunnel field-effect transistor and method for forming the same201910,475,907Vertical tunnel field effect transistor (FET)201910,475,897III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof201910,263,073III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof201910,050,111Semiconductor device channel system and method20189,876,088III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof20189,768,263'Semiconductor devices and FinFET devices'20179,768,289'Field effect transistor with conduction band electron channel and uni-terminal response'20179,735,239'Semiconductor device channel system and method'20179,711,647'Thin-sheet FinFET device'20179,646,823'Semiconductor dielectric interface and gate stack'20179,647,097'Vertical tunnel field effect transistor (FET)'20179,614,070'Field effect transistor with conduction band electron channel and uni-terminal response'20179,601,571'Nanowire fabrication method and structure thereof'20179,412,871'FinFET with channel backside passivation layer device and method'20169,390,913'Semiconductor dielectric interface and gate stack'20169,368,604'Method of removing threading dislocation defect from a fin feature of III-V group semiconductor material'20169,355,920'Methods of forming semiconductor devices and FinFET devices, and FinFET devices'20169,214,555'Barrier layer for FinFET channels'20159,209,180'Field effect transistor with conduction band electron channel and uni-terminal response'20159,123,645'Methods of making semiconductor devices with low leakage Schottky contacts'20158,916,927'Vertical tunnel field effect transistor (FET)'20148,847,280'Insulated gate field effect transistors'20148,802,531'Split-channel transistor and methods for forming the same'20148,735,903'Density of states engineered field effect transistor'20148,604,518'Split-channel transistor and methods for forming the same'20138,592,878'Semiconductor devices with low leakage Schottky contacts'20138,471,329'Tunnel FET and methods for forming the same'20138,288,798'Step doping in extensions of III-V family semiconductor devices'20128,105,925'Method for forming an insulated gate field effect device'20127,935,620'Method for forming semiconductor devices with low leakage Schottky contacts'20117,842,587'III-V MOSFET fabrication and device'20107,799,647'MOSFET device featuring a superlattice barrier layer and method'20107,692,224'MOSFET structure and method of manufacture'20107,682,912'III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same'20107,442,654'Method of forming an oxide layer on a compound semiconductor structure'20087,432,565'III-V compound semiconductor heterostructure MOSFET device'20087,429,506'Process of making a III-V compound semiconductor heterostructure MOSFET'20087,276,456'Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same'20077,253,455'pHEMT with barrier optimized for low temperature operation'20077,202,182'Method of passivating oxide/compound semiconductor interface'20077,119,381'Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices'20066,963,090'Enhancement mode metal-oxide-semiconductor field effect transistor'20056,914,012'Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same'20056,756,320'Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure'20046,359,294'Insulator-compound semiconductor interface structure'20026,159,834'Method of forming a gate quality oxide-compound semiconductor structure'20006,094,295'Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication'20006,030,453'III-V epitaxial wafer production'20006,025,281'Passivation of oxide-compound semiconductor interfaces'20005,945,718'Self-aligned metal-oxide-compound semiconductor device and method of fabrication'19995,907,792'Method of forming a silicon nitride layer'19995,904,553'Fabrication method for a gate quality oxide-compound semiconductor structure'19995,902,130'Thermal processing of oxide-compound semiconductor structures'19995,821,171'Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article'19985,665,658'Method of forming a dielectric layer structure'19975,597,768'Method of forming a Ga.sub.2 O.sub.3 dielectric layer'19975,550,089'Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd.sub.3 Ga.sub.5 O.sub.12 source.'19965,451,548'Electron beam deposition of gallium oxide thin films using a single high purity crystal source'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–1998Based in New Providence, NJ, US· patent location history
1997–2002Patents assigned to MOTOROLA INC (11)· patent assignee history
1997–2014Based in Chandler, AZ, US· patent location history
2004–2015Patents assigned to FREESCALE SEMICONDUCTOR INC (19)· patent assignee history
2012–2017Patents assigned to PASSLACK MATTHIAS (10)· patent assignee history
2012–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (10)· patent assignee history
2012–2015Based in Bertem, BE· patent location history
2014–2021Based in Huldenberg, BE· patent location history
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (31)· patent assignee history
2017–2020Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD312015–2021
FREESCALE SEMICONDUCTOR INC192004–2015
MOTOROLA INC111997–2002
PASSLACK MATTHIASself102012–2017
TAIWAN SEMICONDUCTOR MFG102012–2016
Locations
LocationPatentsSpan
Huldenberg, BE312014–2021
Chandler, AZ, US291997–2014
Bertem, BE52012–2015
Hsinchu, TW42017–2020
New Providence, New Jersey, US31995–1998