Inventor

Tomohisa Mizuno

Inventor

Yokohama, JP

Overview

1992–2015

Patent span

Electricity

Primary field (CPC H)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices56%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%

H01LSemiconductor devices3%

H10BElectronic memory devices3%

PatentTitleYear

8,941,092'Method for forming semiconductor device structure and semiconductor device'2015 7,659,537'Field effect transistor'2010 7,009,200'Field effect transistor'2006 6,917,096'Semiconductor device and method of manufacturing substrate'2005 6,774,390'Semiconductor device'2004 6,709,909'Semiconductor device and method of manufacturing the same'2004 6,607,948'Method of manufacturing a substrate using an SiGe layer'2003 6,583,437'Semiconductor device and method of manufacturing the same'2003 6,509,587'Semiconductor device'2003 6,326,667'Semiconductor devices and methods for producing semiconductor devices'2001 5,844,278'Semiconductor device having a projecting element region'1998 5,734,181'Semiconductor device and manufacturing method therefor'1998 5,698,883'MOS field effect transistor and method for manufacturing the same'1997 5,696,401'Semiconductor device and method of fabricating the same'1997 5,430,313'Transistor with an offset gate structure'1995 5,302,845'Transistor with an offset gate structure'1994 5,302,844'Semiconductor device and method for manufacturing the same'1994 5,216,271'BiCMOS device with low bandgap CMOS contact regions and low bandgap bipolar base region'1993 5,185,646'Semiconductor device with improved current drivability'1993 5,119,152'MOS semiconductor device having LDD structure'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2010Patents assigned to TOSHIBA KK (19)· patent assignee history

1992–2010Based in Yokohama, JP· patent location history

1997–2015Based in Kanagawa, JP· patent location history

2015Patents assigned to MIZUNO TOMOHISA (1)· patent assignee history

2015Patents assigned to UNIV KANAGAWA (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	19	1992–2010
MIZUNO TOMOHISAself	1	2015
UNIV KANAGAWA	1	2015

Locations

Location	Patents	Span
Yokohama, JP	15	1992–2010
Kanagawa, JP	5	1997–2015