Inventor
Bartlomiej Adam Kardasz
Inventor
Pleasanton, CA, US
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10NElectric solid-state devices not otherwise provided for25%
G11CStatic stores20%
H01FMagnets14%
H10BElectronic memory devices14%
B82YSpecific uses or applications of nanostructures1%
H10DInorganic electric semiconductor devices1%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
PatentTitleYear
10,916,696Method for manufacturing magnetic memory element with post pillar formation annealing202110,879,454Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory application202010,840,436Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture202010,784,439Precessional spin current magnetic tunnel junction devices and methods of manufacture202010,734,574Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory202010,672,976Precessional spin current structure with high in-plane magnetization for MRAM202010,665,777Precessional spin current structure with non-magnetic insertion layer for MRAM202010,651,370Perpendicular magnetic tunnel junction retention and endurance improvement202010,615,335Spin transfer torque structure for MRAM devices having a spin current injection capping layer202010,580,827Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching202010,553,787Precessional spin current structure for MRAM202010,468,590High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory201910,468,588Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer201910,461,242Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications201910,424,357Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer201910,424,723Magnetic tunnel junction devices including an optimization layer201910,388,853Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers201910,374,147Perpendicular magnetic tunnel junction having improved reference layer stability201910,374,153Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic material201910,367,139Methods of manufacturing magnetic tunnel junction devices201910,367,136Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structure201910,339,993Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching201910,319,900Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density201910,236,439Switching and stability control for perpendicular magnetic tunnel junction device201910,211,395Method for combining NVM class and SRAM class MRAM elements on the same chip201910,147,872Spin transfer torque structure for MRAM devices having a spin current injection capping layer201810,141,499Perpendicular magnetic tunnel junction device with offset precessional spin current layer201810,032,978MRAM with reduced stray magnetic fields201810,026,892Precessional spin current structure for MRAM20189,728,712'Spin transfer torque structure for MRAM devices having a spin current injection capping layer'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2020Patents assigned to SPIN TRANSFER TECH INC (9)· patent assignee history
2017–2021Based in Pleasanton, CA, US· patent location history
2019–2021Patents assigned to SPIN MEMORY INC (24)· patent assignee history
2019–2020Based in Fremont, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SPIN MEMORY INC | 24 | 2019–2021 |
| SPIN TRANSFER TECH INC | 9 | 2017–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Pleasanton, California, US | 26 | 2017–2021 |
| Fremont, California, US | 4 | 2019–2020 |